Datasheet > SKT 15,2 Qu ZG bond

SKT 15,2 Qu ZG bond

更新时间： 2024-10-01 14:53:07

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
2页	81K
描述
Chips

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SKT 15,2 Qu ZG bond 数据手册

SKT 15,2 Qu ZG bond.

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

T_j= 25 °C, I_R= 0.45 mA

V_RRM

V_DRM

I_T(AV)

I_TSM

i²t

1600

175

T_j= 25 °C, I_D= 0.45 mA

T_c= 80 °C, T_j= 130 °C

T_j= 130 °C, 10 ms, sin 180°

3200

51200

130

A²s

T_jmax

°C

THYRISTOR

Electrical Characteristics

Symbol Conditions

min.

typ.

max.

Unit

I_T(DC)= 215 A

T_j= 130 °C, I_T= 250 A

V_T

1.2

0.85

1.4

V_RRM= 1600 V

T_j= 130 °C

T_j= 25 °C

T_j= 115 °C

T_j= 130 °C

T_j= 25 °C

V_T(TO)

r_T

Size: 15,2 mm x 15,2 mm

mΩ

I_GT

V_GT

I_GD

V_GD

I_H

100

1.98

Central gate

SKT 15,2 Qu ZG bond.

220

550

Features

I_L

ꢀ high current density due to double

mesa technology

ꢀ high surge current

Dynamic Characteristics

Symbol Conditions

ꢀ compatible to thick wire bonding

ꢀ compatible to all standard solder

processes

min.

typ.

max.

Unit

T_j= 130 °C

t_q

150

µs

Typical Applications*

(di/dt)_cr

(dv/dt)_cr

A/µs

V/µs

ꢀ conrolled rectifier circuits

ꢀ solid state relays

Thermal Characteristics

Symbol Conditions

min.

typ.

max.

Unit

T_j

-40

130

255

°C

T_stg

T_solder

°C

R_th(j-c)

Semipack 2 assembly

0.2

K/W

Mechanical Characteristics

Symbol Conditions

Values

Unit

Raster

size

15.2 x 15.2

231.0

mm²

Area total

Anode

solderable (Ag/Ni)

Gate and

Cathode

bondable (Al)

Wire bond

Package

Al,diameter ≤ 500µm

tray

Chips /

Package

pcs

SKT

Rev. 0 – 19.02.2010

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