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SKIIP302GAB061-257CTVF PDF预览

SKIIP302GAB061-257CTVF

更新时间： 2024-09-25 15:51:23
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 驱动接口集成电路
页数 文件大小 规格书
3页 102K
描述
Half Bridge Based Peripheral Driver, 375A

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中文翻译

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SKIIP302GAB061-257CTVF 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.84
内置保护：TRANSIENT; OVER CURRENT; THERMAL接口集成电路类型：HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码：R-XXMA-X功能数量：1
最高工作温度：85 °C最低工作温度：-25 °C
输出电流流向：SOURCE AND SINK标称输出峰值电流：375 A
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：MICROELECTRONIC ASSEMBLY认证状态：Not Qualified
标称供电电压：15 V表面贴装：NO
温度等级：OTHER端子形式：UNSPECIFIED
端子位置：UNSPECIFIEDBase Number Matches：1

SKIIP302GAB061-257CTVF 数据手册

 浏览型号SKIIP302GAB061-257CTVF的Datasheet PDF文件第2页浏览型号SKIIP302GAB061-257CTVF的Datasheet PDF文件第3页 
SKiiP 302 GH 061 - 257 CTV  
Absolute Maximum Ratings  
SKiiPPACK  
SK integrated intelligent  
Power PACK  
Symbol Conditions 1)  
Values  
2500  
Units  
V
4)  
Visol  
AC, 1min  
single phase bridge  
SKiiP  
Top ,Tstg  
Operating / stor. temperature  
-25...+85  
°C  
302 GH 061 - 257 CTV 7,9)  
IGBT and Inverse Diode  
VCES  
600  
400  
300  
V
V
A
°C  
A
Preliminary Data  
Case S2  
5)  
VCC  
IC  
Tj  
Operating DC link voltage  
IGBT  
IGBT + Diode  
Diode  
3)  
-40...+150  
300  
IF  
IFM  
IFSM  
Diode, tp < 1 ms  
Diode, Tj = 150 °C, 10ms; sin  
600  
3000  
45  
A
A
I2t (Diode) Diode, Tj = 150 °C, 10ms  
Driver  
kAs2  
VS1  
VS2  
fsmax  
dV/dt  
Stabilized Power Supply  
Non-stabilized Power Supply  
Switching frequency  
18  
30  
20  
75  
V
V
kHz  
kV/µs  
Primary to secondary side  
Characteristics  
Symbol Conditions 1)  
min.  
typ.  
max.  
Units  
Features  
IGBT11)  
V(BR)CES  
• Short circuit protection, due to  
evaluation of current sensor  
signals  
Driver without supply  
V
mA  
mA  
≥VCES  
−
−
4,5  
−
0,4  
−
0,94  
6,4  
2,9  
ICES  
VGE = 0,  
CE = VCES  
Tj = 25 °C  
Tj = 125 °C  
−
−
−
−
−
−
−
V
• Isolated power supply  
• Low thermal impedance  
• Optimal thermal management  
with integrated heatsink  
• Pressure contact technology  
with increased power cycling  
capability, compact design  
• Low stray inductance  
• High power, small losses  
• Over-temperature protection  
VTO  
rT  
VCesat  
VCesat  
Tj = 125 °C  
Tj = 125 °C  
IC = 300A,  
IC = 300A,  
V
−
−
−
−
−
mΩ  
V
V
Tj = 125 °C  
Tj = 25 °C  
2,65  
27/38  
Eon + Eoff VCC=300/400V,IC=300A  
Tj = 125 °C  
mJ  
CCHC  
LCE  
per Phase, AC side  
Top, Bottom  
0,8  
15  
nF  
nH  
−
−
−
−
Inverse Diode 2)  
1)  
Theatsink = 25 °C, unless  
VF = VEC IF= 300A;  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
1,72  
1,75  
9
0,78  
3,3  
V
V
mJ  
V
−
−
−
−
−
−
−
−
−
−
otherwise specified  
CAL = Controlled Axial Lifetime  
VF= VEC  
IF= 300A  
2)  
Eon + Eoff IF= 300A;  
Technology (soft and fast)  
without driver  
Driver input to DC link /  
3)  
VTO  
rT  
Tj = 125 °C  
Tj = 125 °C  
4)  
mΩ  
AC output to DC link / AC  
output to heatsink  
with Semikron-DC link (low  
inductance)  
other heatsinks on request  
C - Integrated current sensors  
T - Temperature protection  
V - 15 V or 24 V power supply  
options available for driver:  
Thermal Characteristics  
10)  
Rthjs  
Rthjs  
Rthsa  
per IGBT  
per Diode  
P16 heatsink; see case S2  
0,150  
0,250  
44  
K/W  
K/W  
K/KW  
−
−
−
−
−
−
5)  
10)  
6,10)  
6)  
Driver  
IS1  
IS2  
7)  
Supply current 15V-supply  
Supply current 24V-supply  
Interlock-time  
230+230*fs /fsmax+2,5*IAC/A  
170+180*fs /fsmax+1,9*IAC/A  
2,3  
mA  
mA  
µs  
9)  
tinterlock-driver  
SKiiPPACK protection  
U - DC link voltage sense  
F – Fiber optic connector  
“s” referenced to temperature  
ITRIPSC  
ITRIPLG  
TTRIP  
Short circuit protection  
375  
87  
115  
410  
A
A
°C  
V
10)  
Ground fault protection  
Over-temp. protection  
UDC-protection  
sensor  
11)  
9)  
NPT-technology with homo-  
genous current-distribution  
UDCTRIP  
Mechanical Data  
M1  
M2  
DC terminals, SI Units  
AC terminals, SI Units  
4
8
6
10  
Nm  
Nm  
−
−
B 7 − 28  
0898  
by SEMIKRON  
123

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