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SKHI21H4 PDF预览

SKHI21H4

更新时间： 2024-09-30 19:55:31
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 驱动接口集成电路
页数 文件大小 规格书
9页 353K
描述
Buffer/Inverter Based Peripheral Driver, 3.3A, Hybrid

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SKHI21H4 技术参数

生命周期：Obsolete包装说明：, MODULE,34LEAD,2.0
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.84
内置保护：TRANSIENT; OVER CURRENT; UNDER VOLTAGE接口集成电路类型：BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：S-XDMA-T34功能数量：1
端子数量：34最高工作温度：85 °C
最低工作温度：-40 °C输出电流流向：SOURCE AND SINK
标称输出峰值电流：3.3 A封装主体材料：UNSPECIFIED
封装等效代码：MODULE,34LEAD,2.0封装形状：SQUARE
封装形式：MICROELECTRONIC ASSEMBLY电源：15 V
认证状态：Not Qualified子类别：Peripheral Drivers
最大供电电压：15.6 V最小供电电压：14.4 V
标称供电电压：15 V表面贴装：NO
技术：HYBRID温度等级：INDUSTRIAL
端子形式：THROUGH-HOLE端子位置：DUAL
Base Number Matches：1

SKHI21H4 数据手册

 浏览型号SKHI21H4的Datasheet PDF文件第2页浏览型号SKHI21H4的Datasheet PDF文件第3页浏览型号SKHI21H4的Datasheet PDF文件第4页浏览型号SKHI21H4的Datasheet PDF文件第5页浏览型号SKHI21H4的Datasheet PDF文件第6页浏览型号SKHI21H4的Datasheet PDF文件第7页 
SEMIDRIVER  
Absolute Maximum Ratings  
Symbol Term  
Value  
18  
Unit  
V
Hybrid Double IGBT and  
MOSFET Driver  
SKHI 21, SKHI 21 H4  
SKHI 22, SKHI 22 H4  
VS  
Supply voltage prim.  
ViH  
IiH  
IGon  
IGoff  
Input signal voltage (HIGH) max.  
Input signal current (HIGH)  
Output current (peak) max.  
Output current (peak) max.  
VS + 0,3  
0,34  
3,3  
V
mA  
A
3,3  
A
mA  
IoutAVmax Output average current SKHI21/SKHI22 + 406)/+ 206)  
VCE  
Collector-emitter voltage sense  
across the IGBTSKHI21/SKHI22  
1200 / 1700  
25 1)  
V
dv/dt  
Visol IO  
Visol12  
Rate of rise and fall of voltage  
secondary to primary side  
kV/µs  
Isolation test volt. IN-OUT (RMS; 1min.)  
input-output Version “H4": (1min.)  
Isolation test voltage  
2500  
4000  
V
V
output 1-output 2 (RMS; 1min.)  
1500  
V
Top  
Tstg  
Operating temperature  
Storage temperature  
– 40 ... + 85  
– 40 ... + 85  
°C  
°C  
Features  
Electrical Characteristics  
Value  
SKHI 21/ 22  
•
Double driver for half bridge mo-  
dules  
Symbol Term  
Unit  
V
•
•
•
•
SKHI 22 H4 is for 1700 V-IGBT  
Drives MOSFETs VDS(on) < 10 V  
CMOS compatible inputs  
Short circuit protection by VCE  
monitoring and switch off  
Drive interlock top/bottom  
Isolation by transformers  
Supply undervoltage protection  
(13 V)  
VS  
Supply voltage primary side  
15 ± 0,6  
160  
typ.75/typ.110  
12,9  
IS  
Iso  
ViT+  
Supply current primary side max  
Supply current primary side no load  
Input threshold voltage (HIGH) min.  
Input threshold voltage (LOW) max.  
Turn-on gate voltage output  
Turn-off gate voltage SKHI 21/SKHI 22  
Operating frequency IGBT/MOS  
Coupling capacitances  
Input-output turn-on propagation time  
Input-output turn-off propagation time  
Error input-output propagation time  
Reference voltage for VCE monitoring 5) typ. 6; max. 9  
mA  
mA  
V
ViT–  
VG(on)  
VG(off)  
f
2,1  
15  
0/– 15  
V
V
V
•
•
•
→ page B14-28  
see fig. 3  
typ. 1 + tTD  
typ. 1  
•
Error latch/output  
Cps..  
td(on) io  
td(off) io  
td(err)  
VCEstat  
pF  
µs  
µs  
µs  
V
Typical Applications  
•
Driver for IGBT and MOSFET  
modules in bridge circuits in  
choppers, inverter drives, UPS  
and welding inverters  
typ. 1  
•
DC bus voltage up to 1000 V.  
External Components see fig. 1 and fig. 4  
1)  
Component  
Function  
Recommended  
value  
Primary/OUT2 =  
10kV/µs +900 V  
RTD  
Dead time of interlock:  
0 2)  
2)  
3)  
Short circuit for tTD = 2,7 µs  
Higher resistance reduces free-  
wheeling diode peak recovery  
current, increases IGBT turn-on  
time. RON should be chosen so  
that the turn-on delay time td(on)  
does not exceed 1 µs. See also  
Fig. 10  
Higher resistance reduces turn-  
off voltage spike, increases turn-  
off time and turn-off power  
dissipation. See also Fig. 10.  
adjustable by RCE  
t
TD (µs) = 2,7 + 0,13  
Reference voltage for VCE monitoring:  
CE (kΩ) – 25  
10 + RCE (kΩ)  
R
TD (kΩ)  
RTD max.=100 kΩ  
RCE  
RCE = 24 kΩ  
min. 10 kΩ  
9
R
V
CEstat (V) =  
(1) VCEstat = 5,6 V  
max. 9 V  
CCE  
Inhibit time for VCE monitoring:  
CCE = 0,33 nF  
4)  
max. 2,7 nF  
tmin = 1,75 µs  
max. 10 µs  
15–VCEstat (V)  
t
min = τCE In  
(2)  
(3)  
10 – VCEstat (V)  
10 RCE (kΩ)  
10 + RCE (kΩ)  
5)  
6)  
τ
CE (µs) = CCE (nF)  
τCE = 2,3 µs  
double when using half driver  
RON  
ROFF  
Turn-on speed of the IGBT 3)  
Turn-off speed of the IGBT 4)  
min. 3,3 Ω  
min. 3,3 Ω  
© by SEMIKRON  
0896  
B 14 – 21  
1234567...9

中文翻译

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