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SKHI23

更新时间: 2024-02-20 21:21:31
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赛米控丹佛斯 - SEMIKRON 驱动器双极性晶体管
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11页 1634K
描述
Medium Power Double IGBT Driver

SKHI23 数据手册

 浏览型号SKHI23的Datasheet PDF文件第2页浏览型号SKHI23的Datasheet PDF文件第3页浏览型号SKHI23的Datasheet PDF文件第4页浏览型号SKHI23的Datasheet PDF文件第5页浏览型号SKHI23的Datasheet PDF文件第6页浏览型号SKHI23的Datasheet PDF文件第7页 
SKHI 23/12  
Absolute Maximum Ratings  
Symbol Conditions  
Ta = 25 °C, unless otherwise specified  
Values  
Units  
VS  
Supply voltage primary  
Input signal voltage (HIGH) (for 15 V  
and 5 V input level)  
18  
V
V
ViH  
VS + 0,3  
IoutPEAK  
IoutAV  
VCE  
Output peak current  
± 8  
± 50  
1200  
A
mA  
V
Output average current  
Collector emitter voltage sense  
Rate of rise and fall of voltage  
(secondary to primary side)  
Isolation test volt. IN-OUT (2 sec.  
AC)  
dv/dt  
75  
kV/µs  
SEMIDRIVERTM  
Visol IO  
2500  
V
RGon min  
RGoff min  
Qout/pulse charge per pulse  
Top  
Tstg  
minimal RGon  
minimal RGoff  
2,7  
2,7  
4,8  
µC  
°C  
°C  
Medium Power Double  
IGBT Driver  
Operating temperature  
Storage temperature  
- 25 ... + 85  
- 25 ... + 85  
SKHI 23/12  
Characteristics  
Ta = 25 °C, unless otherwise specified  
Features  
Symbol  
Conditions  
min. typ. max. Units  
• SKHI 23/12 drives all  
SEMIKRON IGBTs with VCES up  
to 1200 V (VCE-monitoring  
adjusted from factory for 1200  
V-IGBT)  
• Double driver circuit for medium  
power IGBTs, also as two  
independent single drivers  
• CMOS / TTL (HCMOS)  
compatible input buffers  
• Short circuit protection by  
VCE monitoring  
• Soft short circuit turn-off  
• Isolation due to transformers  
(no opto couplers)  
• Supply undervoltage  
monitoring (< 13 V)  
VS  
IS  
ISO  
Supply voltage primary  
Supply current (max.)  
Supply current primary side (standby)  
Input threshold voltage (HIGH) min.  
15 V input level  
for 5 V input level  
Input threshold voltage (LOW) max.  
for 15 V input level  
14,4  
15,0  
0,321)  
0,12  
15,6  
V
A
A
2)  
ViT+  
12,5  
2,4  
V
V
ViT-  
3,6  
0,50  
V
V
V
V
for 5 V input level  
Turn-on output gate voltage  
Turn-off output gate voltage  
VG(on)  
VG(off)  
+ 15  
- 8  
see fig.  
15  
f
Maximum operating frequency  
td(on)IO  
td(off)IO  
td(err)  
tTD  
VCEstat  
RGon  
Input-output turn-on propagation time  
Input-output turn-off propagation time  
Error input-output propagation time  
Dead time  
Reference voltage for VCE monitoring  
Internal gate resistor for ON signal  
Internal gate resistor for OFF signal  
Primary to secondary capacitance  
1,4  
1,4  
µs  
µs  
µs  
µs  
V
pF  
1,03)  
106)  
5,25)  
224)  
224)  
12  
• Error memory / ouput signal  
(LOW or HIGH logic)  
• Driver interlock top / bottom  
• Internal isolated power supply  
RGoff  
Cps  
Typical Applications  
• High frequency SMPS  
• Half and Full bridges  
• Three phase motor inverters  
• High power UPS  
1) This current value is a function of the  
output load condition  
2) Operating fsw = 0 Hz  
3) This value does not consider ton of IGBT  
and tMIN adjusted by RCE and CCE  
see also fig. 14  
;
4) Matched to be used with IGBTs < 100 A;  
for higher currents, see table 4  
5) With RCE = 18 k, CCE = 330 pF;  
see fig. 6  
6) Factory adjusted; other values see table  
3
2
Driver Electronic – PCB mountable  
31-10-2005  
© by SEMIKRON  

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