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SKHI22B PDF预览

SKHI22B

更新时间: 2024-11-05 21:21:47
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 驱动接口集成电路
页数 文件大小 规格书
9页 257K
描述
Half Bridge Based Peripheral Driver, Hybrid,

SKHI22B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:, MODULE,20LEAD,2.0
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.75
内置保护:TRANSIENT; OVER CURRENT; UNDER VOLTAGE接口集成电路类型:HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码:R-XXMA-XJESD-609代码:e2
功能数量:2端子数量:20
最高工作温度:85 °C最低工作温度:-40 °C
输出电流流向:SOURCE AND SINK封装主体材料:UNSPECIFIED
封装等效代码:MODULE,20LEAD,2.0封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY峰值回流温度(摄氏度):NOT SPECIFIED
电源:15 V认证状态:Not Qualified
子类别:Peripheral Drivers最大供电电压:15.6 V
最小供电电压:14.4 V标称供电电压:15 V
表面贴装:NO技术:HYBRID
温度等级:INDUSTRIAL端子面层:Tin/Silver (Sn/Ag)
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:1.15 µs
接通时间:1.15 µsBase Number Matches:1

SKHI22B 数据手册

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SKHI 21 A, SKHI 22 A / B  
SEMIDRIVER®  
Hybrid Dual IGBT Driver  
SKHI 22 A / B  
Double driver for halfbridge  
IGBT modules  
SKHI 22 A/B H4 is for 1700  
V-IGBT  
SKHI 22 A is compatible to  
old SKHI 22  
SKHI 22 B has additional  
functionality  
Absolute Maximum Ratings  
Symbol Term  
Values  
Units  
V
V
V
A
mA  
kHz  
V
VS  
Supply voltage prim.  
18  
VS + 0,3  
5 + 0,3  
8
40  
50  
1700  
ViH  
Input signal volt. (High)  
SKHIxxA  
SKHI22B  
IoutPEAK Output peak current  
IoutAVmax Output average current  
fmax  
VCE  
max. switching frequency  
Collector emitter voltage sense across the  
IGBT  
dv/dt  
VisolIO  
Visol12  
Rate of rise and fall of voltage secondary  
to primary side  
50  
kV/µs  
Isolation test voltage  
Standard  
2500  
4000  
1500  
Vac  
Vac  
V
Hybrid Dual MOSFET  
Driver  
SKHI 21 A  
drives MOSFETs with  
VDS(on) < 10 V  
input-output (2 sec.AC)  
Version „H4"  
Isolation test voltage ouput 1 - output 2  
(2 sec.AC)  
RGonmin  
RGoffmin  
Minimum rating for RGon  
Minimum rating for RGoff  
3
3
µC  
°C  
°C  
Qout/pulse Max. rating for output charge per pulse  
4 1)  
is compatible to old SKHI 21  
Top  
Tstg  
Operating temperature  
Storage temperature  
- 40... + 85  
- 40... + 85  
Preliminary Data  
Electrical Characteristics (Ta = 25 °C)  
Symbol Term  
Values  
typ. max. Units  
min.  
VS  
ISO  
Supply voltage primary side  
Supply current primary side (no load)  
Supply current primary side (max.)  
14,4  
10,9  
3,5  
4,7  
1,5  
15  
80  
15 / 0  
5 / 0  
11,7  
3,7  
15,6  
290  
V
mA  
mA  
V
V
V
V
V
V
Vi  
Input signal voltage  
SKHIxxA on/off  
SKHI22B on/off  
ViT+  
ViT-  
Input threshold voltage (High) SKHIxxA  
SKHI22B  
Input threshold voltage (Low) SKHIxxA  
SKHI22B  
12,5  
3,9  
6,5  
2,0  
Features  
5,5  
1,75  
CMOS compatible inputs  
Short circuit protection by VCE  
monitoring and switch off  
Drive interlock top/bottom  
Isolation by transformers  
Supply undervoltage protection  
(13 V)  
Rin  
Input resistance  
SKHIxxA  
SKHI22B  
10  
3,3  
kΩ  
kΩ  
VG(on)  
VG(off)  
Turn on gate voltage output  
Turn off gate voltage output SKHI22x  
SKHI21A  
+15  
-7  
0
V
V
V
RGE  
fASIC  
td(on)IO  
td(off)IO  
td(err)  
Internal gate-emitter resistance  
0,85  
0,85  
3,3  
0
22  
8
1
1
0,6  
9
1,15  
1,15  
kΩ  
MHz  
µs  
µs  
µs  
µs  
µs  
µs  
V
Error latch/output  
Asic system switching frequency  
Input-output turn-on propagation time  
Input-output turn-off propagation time  
Error input-output propagation time  
Typical Applications  
Driver for IGBT and MOSFET  
modules in bridge circuits in  
choppers, inverter drives, UPS  
and welding inverters  
tpERRRESET Error reset time  
tTD  
Top-Bot Interlock Dead Time SKHIxxA  
SKHI22B  
Reference voltage for VCE-monitoring  
4,3  
4,3  
10  
10  
VCEstat  
5 2)  
6 3)  
DC bus voltage up to 1200V  
V
1) see fig. 6  
Cps  
Coupling capacitance primary secondary  
12  
pF  
106 h  
g
2) At RCE = 18 k, CCE = 330pF  
3) At RCE = 36 k, CCE = 470pF,  
RVCE = 1kΩ  
MTBF  
m
Mean Time Between Failure Ta = 40° C  
weight  
2,0  
45  
© by SEMIKRON  
031127  
1

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