Datasheet > SK96GAB06UF

SK96GAB06UF

更新时间： 2023-12-06 20:02:50

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
7页	668K
描述
Bridge Rectifier Modules SEMITOP 3 (55x31x12)

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中文翻译

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SK96GAB06UF 数据手册

SK96GAB06UF

Absolute Maximum Ratings

Symbol Conditions

IGBT 1

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

150

-20 ... 20

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

T_j= 150 °C

I_C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

SEMITOP^®3

V_CC= 800 V

Single phase ultrafast bridge

rectifier with single IGBT

t_psc

T_j

_GE≤ 15 V

T_j= 150 °C

µs

°C

_CES≤ 1200 V

-40 ... 175

Absolute Maximum Ratings

Symbol Conditions

Rectifier

SK96GAB06UF

Values

Unit

Features*

• 1200V trench4 IGBT

T_j= 25 °C

V_RSM

V_RRM

I_D

600

126

630

• CAL4F antiparallel diode

• Hyperfast rectifier diodes

• Compact design

T_s= 25 °C

T_s= 70 °C

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

rec 120°

T_j= 150 °C

• One screw mounting

I_FSM

i²t

sin 180°

10 ms

• Heat transfer and insulation through

direct copper bonded aluminum oxide

ceramic (DBC)

549

1984

1507

-40 ... 150

A²s

°C

sin 180°

10 ms

Typical Applications

T_j

• Switching (not for linear use)

• Resonant applications

• Switch mode power supply

• UPS

Absolute Maximum Ratings

Symbol Conditions

Diode 2

Values

Unit

Remarks

Hyperfast diode = Rectifier

CAL4F diode = Diode2

T_j= 25 °C

V_RRM

I_F

1200

°C

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

T_j= 150 °C

Dynamic measurements set-up:

- IGBT switching on external 50A 1200V

CAL4F diode

- Diode2 switching on external 15A

1200V Trench4 IGBT

I_F

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

10 ms, sin 180°, T_j= 150 °C

-40 ... 175

Absolute Maximum Ratings

Symbol Conditions

Module

Values

Unit

∆T_terminalat PCB joint = 30 K, per pin

module without TIM

AC, sinusoidal, t = 1 min

I_t(RMS)

T_stg

V_isol

-40 ... 125

2500

°C

GAB

Rev. 2.0 – 27.01.2022

12 3 4 5 6 7

中文翻译

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