SKA06N60

更新时间： 2024-02-27 00:35:32

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管双极性晶体管
页数	文件大小	规格书
15页	452K
描述
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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SKA06N60 数据手册

SKP06N60, SKB06N60

SKA06N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

• 75% lower E_offcompared to previous generation

combined with low conduction losses

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

• NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

P-TO-220-3-1

(TO-220AB)

P-TO-263-3-2 (D²-PAK) P-TO-220-3-31

(TO-263AB)

(FullPAK)

• Very soft, fast recovery anti-parallel EmCon diode

• Isolated TO-220, 2.5kV, 60s

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_CE(sat)

T_j

Package

Ordering Code

SKP06N60

SKB06N60

SKA06N60

600V

2.3V

TO-220AB

TO-263AB

TO-220-3-31

Q67040-S4230

Q67040-S4231

Q67040-S4340

150°C

Maximum Ratings

Parameter

Symbol

Value

Unit

SKP06N60

SKB06N60

SKA06N60

600

Collector-emitter voltage

DC collector current

T_C= 25°C

V_CE

I_C

600

6.9

5.0

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

I_{Cpul s}

Turn off safe operating area

V_CE≤ 600V, T_j≤ 150°C

Diode forward current

I_F

T_C= 25°C

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

I_{Fpul s}

V_{G E}

t_SC

±20

Gate-emitter voltage

Short circuit withstand time¹⁾

V_GE= 15V, V_CC≤ 600V, T_j≤ 150°C

Power dissipation

µs

P_{t ot}

T_C= 25°C

Mounting Torque, M3 Screw²⁾

1.0

Operating junction and storage temperature

T_j, T_stg

-55...+150 -55...+150

°C

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

²⁾Maximum mounting processes: 3

Jul-02

12 3 4 5 6 7...15

中文翻译

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