SiZF928DT
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
30
30
1
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
VDS
VGS(th)
IGSS
VGS = 0 V, ID = 1 mA
-
V
nA
μA
A
2
VDS = VGS, ID = 250 μA
2
VDS = 0 V, VGS = +16 V, -12 V
VDS = 0 V, VGS = +16 V, -12 V
100
100
1
-
-
VDS = 24 V, VGS = 0 V
-
1
Zero Gate voltage drain current
On-state drain current b
IDSS
ID(on)
RDS(on)
gfs
-
5
V
DS = 24 V, VGS = 0 V, TJ = 55 °C
-
5
20
20
-
-
VDS 5 V, VGS = 10 V
-
VGS = 10 V, ID = 10 A
0.00180 0.00245
0.00053 0.00075
0.00270 0.00380
0.00082 0.00120
V
GS = 10 V, ID = 15 A
GS = 4.5 V, ID = 5 A
GS = 4.5 V, ID = 10 A
-
Drain-source on-state resistance b
V
-
V
-
VDS = 15 V, ID = 40 A
VDS = 15 V, ID = 50 A
-
97
-
-
Forward transconductance b
Dynamic a
S
175
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
-
1265
5650
455
1796
30
-
Input capacitance
Ciss
Coss
Crss
-
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
-
Output capacitance
pF
-
-
Reverse transfer capacitance
Channel-2
DS = 15 V, VGS = 0 V, f = 1 MHz
125
0.023
0.023
18.5
77
-
V
0.046
Crss/Ciss ratio
0.046
VDS = 15 V, VGS = 10 V, ID = 10 A
VDS = 15 V, VGS = 10 V, ID = 10 A
-
-
28
116
Total gate charge
Qg
V
DS = 15 V, VGS = 4.5 V, ID = 10 A
DS = 15 V, VGS = 4.5 V, ID = 10 A
8.5
12.8
V
-
35
53
-
Channel-1
DS = 15 V, VGS = 4.5 V, ID = 10 A
-
3.9
nC
Gate-source charge
Gate-drain charge
Output charge
Qgs
Qgd
Qoss
Rg
V
-
17
-
-
-
1.6
-
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 10 A
5.2
-
-
13
-
VDS = 15 V, VGS = 0 V
-
51
-
0.2
0.15
1
2
Gate resistance
f = 1 MHz
0.75
1.5
S22-0997 Rev. B, 05-Dec-2022
Document Number: 63037
2
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