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SiZF928DT PDF预览

SiZF928DT

更新时间: 2023-12-06 20:10:12
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
14页 257K
描述
Dual N-Channel 30 V (D-S) MOSFET

SiZF928DT 数据手册

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SiZF928DT  
Vishay Siliconix  
www.vishay.com  
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Static  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
30  
30  
1
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Drain-source breakdown voltage  
Gate-source threshold voltage  
Gate-source leakage  
VDS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 1 mA  
-
V
nA  
μA  
A
2
VDS = VGS, ID = 250 μA  
2
VDS = 0 V, VGS = +16 V, -12 V  
VDS = 0 V, VGS = +16 V, -12 V  
100  
100  
1
-
-
VDS = 24 V, VGS = 0 V  
-
1
Zero Gate voltage drain current  
On-state drain current b  
IDSS  
ID(on)  
RDS(on)  
gfs  
-
5
V
DS = 24 V, VGS = 0 V, TJ = 55 °C  
-
5
20  
20  
-
-
VDS 5 V, VGS = 10 V  
-
VGS = 10 V, ID = 10 A  
0.00180 0.00245  
0.00053 0.00075  
0.00270 0.00380  
0.00082 0.00120  
V
GS = 10 V, ID = 15 A  
GS = 4.5 V, ID = 5 A  
GS = 4.5 V, ID = 10 A  
-
Drain-source on-state resistance b  
V
-
V
-
VDS = 15 V, ID = 40 A  
VDS = 15 V, ID = 50 A  
-
97  
-
-
Forward transconductance b  
Dynamic a  
S
175  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
Ch-1  
Ch-2  
-
-
-
-
-
-
-
1265  
5650  
455  
1796  
30  
-
Input capacitance  
Ciss  
Coss  
Crss  
-
Channel-1  
VDS = 15 V, VGS = 0 V, f = 1 MHz  
-
Output capacitance  
pF  
-
-
Reverse transfer capacitance  
Channel-2  
DS = 15 V, VGS = 0 V, f = 1 MHz  
125  
0.023  
0.023  
18.5  
77  
-
V
0.046  
Crss/Ciss ratio  
0.046  
VDS = 15 V, VGS = 10 V, ID = 10 A  
VDS = 15 V, VGS = 10 V, ID = 10 A  
-
-
28  
116  
Total gate charge  
Qg  
V
DS = 15 V, VGS = 4.5 V, ID = 10 A  
DS = 15 V, VGS = 4.5 V, ID = 10 A  
8.5  
12.8  
V
-
35  
53  
-
Channel-1  
DS = 15 V, VGS = 4.5 V, ID = 10 A  
-
3.9  
nC  
Gate-source charge  
Gate-drain charge  
Output charge  
Qgs  
Qgd  
Qoss  
Rg  
V
-
17  
-
-
-
1.6  
-
Channel-2  
VDS = 15 V, VGS = 4.5 V, ID = 10 A  
5.2  
-
-
13  
-
VDS = 15 V, VGS = 0 V  
-
51  
-
0.2  
0.15  
1
2
Gate resistance  
f = 1 MHz  
0.75  
1.5  
S22-0997 Rev. B, 05-Dec-2022  
Document Number: 63037  
2
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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