Datasheet > SiHP24N80AEF

SiHP24N80AEF

更新时间： 2023-12-06 20:10:05

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	128K
描述
EF Series Power MOSFET With Fast Body Diode

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SiHP24N80AEF 数据手册

SiHP24N80AEF

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Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum junction-to-ambient

Maximum junction-to-case (drain)

R_thJA

R_thJC

°C/W

0.6

SPECIFICATIONS (T_J= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX. UNIT

Static

Drain-source breakdown voltage

V_DS

V_GS= 0 V, I_D= 250 μA

Reference to 25 °C, I_D= 1 mA

V_DS= V_GS, I_D= 250 μA

800

V/°C

V_DStemperature coefficient

ΔV_DS/T_J

V_GS(th)

0.7

Gate-source threshold voltage (N)

V_GS

20 V

30 V

100

μA

Gate-source leakage

I_GSS

I_DSS

V_DS= 640 V, V_GS= 0 V

_DS= 640 V, V_GS= 0 V, T_J= 125 °C

V_GS= 10 V I_D= 10 A

Zero gate voltage drain current

0.195

Drain-source on-state resistance

Forward transconductance ^a

Dynamic

R_DS(on)

g_fs

0.170

9.4

V_DS= 20 V, I_D= 10 A

Input capacitance

C_iss

C_oss

C_rss

1889

V_GS= 0 V,

Output capacitance

_DS= 100 V,

f = 1 MHz

Reverse transfer capacitance

Effective output capacitance, energy

C_o(er)

C_o(tr)

V_DS= 0 V to 480 V, V_GS= 0 V

Effective output capacitance, time

328

Total gate charge

Q_g

Q_gs

Q_gd

t_d(on)

t_r

0.5

Gate-source charge

Gate-drain charge

Turn-on delay time

Rise time

V_GS= 10 V

I_D= 10 A, V_DS= 640 V

100

102

1.1

V_DD= 640 V, I_D= 10 A,

_GS= 10 V, R_g= 9.1 Ω

Turn-off delay time

Fall time

t_d(off)

t_f

Gate input resistance

Drain-Source Body Diode Characteristics

R_g

f = 1 MHz, open drain

0.2

MOSFET symbol

showing the

integral reverse

p - n junction diode

Continuous source-drain diode current

Pulsed diode forward current

I_S

I_SM

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

V_SD

t_rr

T_J= 25 °C, I_S= 10 A, V_GS= 0 V

1.2

254

1.6

μC

127

0.8

T_J= 25 °C, I_F= I_S= 10 A,

di/dt = 100 A/μs, V_R= 400 V

Q_rr

I_RRM

S21-1193-Rev. A, 13-Dec-2021

Document Number: 92426

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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