Datasheet > SI6955DQ

SI6955DQ

更新时间： 2024-02-03 19:59:20

品牌	Logo	应用领域
威世 - VISHAY		开关光电二极管晶体管
页数	文件大小	规格书
5页	86K
描述
Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET

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技术参数
数据手册
替代型号

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SI6955DQ 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.33	Is Samacsys：	N
最大漏极电流 (Abs) (ID)：	2.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	1 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

SI6955DQ 数据手册

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf

(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein

or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any

information provided herein to the maximum extent permitted by law. The product specifications do not expand or

otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed

therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this

document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless

otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such

applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting

from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding

products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000

Revision: 18-Jul-08

www.vishay.com

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SI6955DQ 替代型号

型号	品牌	替代类型	描述	数据表
SI6955DQ	FAIRCHILD	功能相似	Dual 30V P-Channel PowerTrench MOSFET

与SI6955DQ相关器件

型号	品牌	获取价格	描述	数据表
SI6955DQ-E3	VISHAY	获取价格	Transistor
SI6955DQ-T1-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, P-Channel, Silicon, Metal
SI6955DQ-T1-GE3	VISHAY	获取价格	TRANSISTOR 2500 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT,
SI6956DQ	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
SI6956DQ	TEMIC	获取价格	Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 2-Element, N-Channel, Silicon,
SI6956DQ-T1-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal
SI6963	FAIRCHILD	获取价格	Dual P-Channel 2.5V Specified PowerTrench MOSFET
SI6963BDQ	VISHAY	获取价格	Dual P-Channel 2.5-V (G-S) MOSFET
SI6963BDQ_06	VISHAY	获取价格	Dual P-Channel 2.5-V (G-S) MOSFET
SI6963BDQ-T1-E3	VISHAY	获取价格	Dual P-Channel 2.5-V (G-S) MOSFET

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