Datasheet > SI6966DQ

SI6966DQ

更新时间： 2024-02-16 02:42:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关光电二极管
页数	文件大小	规格书
5页	82K
描述
Dual N-Channel 2.5V Specified PowerTrench MOSFET

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SI6966DQ 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.82
最大漏极电流 (Abs) (ID)：	5.2 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	1.25 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

SI6966DQ 数据手册

April 2001

SI6966DQ

Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description

Features

This N-Channel 2.5V specified MOSFET is a rugged

gate version of Fairchild's Semiconductor’s advanced

PowerTrench process. It has been optimized for power

management applications with a wide range of gate

drive voltage (2.5V – 12V).

• 5.5 A, 20 V. R_DS(ON)= 0.021 Ω @ V_GS= 4.5 V

_DS(ON)= 0.035 Ω @ V_GS= 2.5 V

• Extended V_GSSrange (±12V) for battery applications

• Low gate charge

Applications

• Load switch

• High performance trench technology for extremely

low R_DS(ON)

• Motor drive

• DC/DC conversion

• Power management

• Low profile TSSOP-8 package

TSSOP-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±12

5.5

(Note 1a)

P_D

Power Dissipation

(Note 1a)

(Note 1b)

1.0

0.6

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

125

208

R_θJA

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

6966

SI6966DQ

13’’

12mm

3000 units

SI6966DQ Rev A(W)

2001 Fairchild Semiconductor Corporation

12 3 4 5

下载PDF

与SI6966DQ相关器件

型号	品牌	描述	获取价格	数据表
SI6966DQ-T1-E3	VISHAY	Small Signal Field-Effect Transistor, 4A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-o	获取价格
SI6966EDG-T1-GE3	VISHAY	TRANSISTOR POWER, FET, ROHS COMPLIANT, TSSOP-8, FET General Purpose Power	获取价格
SI6966EDQ	VISHAY	N-Channel 2.5-V (G-S) MOSFET, ESD Protected	获取价格
SI6966EDQ-E3	VISHAY	TRANSISTOR 5.2 A, 20 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, TSSOP-8, FET Ge	获取价格
SI6966EDQ-T1	VISHAY	Power Field-Effect Transistor, 5.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Met	获取价格
SI6966EDQ-T1-GE3	VISHAY	Small Signal Field-Effect Transistor, 5.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal	获取价格