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SGU02G72H1BG2SA-CCRT PDF预览

SGU02G72H1BG2SA-CCRT

更新时间: 2022-02-26 13:26:16
品牌 Logo 应用领域
其他 - ETC 动态存储器双倍数据速率
页数 文件大小 规格书
15页 501K
描述
2048MB DDR3 – SDRAM Ultra Low Profile ECC DIMM

SGU02G72H1BG2SA-CCRT 数据手册

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Data Sheet  
Rev.1.0  
04.02.2011  
IDD Specifications and Conditions  
(0°C TCASE + 85°C; VDDQ = +1.5V ± 0.075V, VDD = +1.5V ± 0.075V)  
Parameter  
& Test Condition  
max.  
Symbol  
IDD0  
Unit  
10600-999  
8500-777  
OPERATING CURRENT *) :  
One device bank Active-Precharge;  
mA  
405  
405  
tRC= tRC (IDD); tCK = tCK (IDD); CKE is HIGH, CS# is HIGH  
between valid commands;  
DQ inputs changing once per clock cycle; Address and  
control inputs changing once every two clock cycles  
OPERATING CURRENT *) :  
One device bank; Active-Read-Precharge;  
IOUT = 0mA; BL = 4, CL = CL (IDD), AL = 0;  
tCK = tCK (IDD), tRC= tRC (IDD), tRAS = tRAS MIN (IDD),  
tRCD = tRCD (IDD); CKE is HIGH, CS# is HIGH between  
valid commands; Address inputs changing once every  
two clock cycles; Data Pattern is same as IDD4W  
mA  
mA  
IDD1  
468  
450  
Fast Exit  
PRECHARGE POWER-DOWN  
IDD2P  
216  
180  
270  
216  
180  
270  
CURRENT:  
All device banks idle; Power-down mode;  
Slow Exit  
tCK = tCK (IDD); CKE is LOW; All Control and  
Address bus inputs are not changing; DQ’s  
are floating at VREF  
PRECHARGE QUIET STANDBY CURRENT:  
All device banks idle;  
tCK = tCK (IDD); CKE is HIGH, CS# is HIGH;  
All Control and Address bus inputs are not changing;  
DQ’s are floating at VREF  
PRECHARGE STANDBY CURRENT:  
All device banks idle;  
mA  
mA  
IDD2Q  
IDD2N  
270  
270  
tCK = tCK (IDD); CKE is HIGH, CS# is HIGH;  
All other Control and Address bus inputs are changing  
once every two clock cycles; DQ inputs changing once  
per clock cycle  
ACTIVE POWER-DOWN CURRENT:  
mA  
mA  
IDD3P  
270  
360  
270  
360  
All device banks open; tCK = tCK (IDD); CKE is LOW; All  
Control and Address bus inputs are not changing; DQ’s  
are floating at VREF (always fast exit)  
ACTIVE STANDBY CURRENT:  
All device banks open; tCK = tCK (IDD),  
IDD3N  
tRAS = tRAS MAX (IDD), tRP = tRP (IDD);  
CKE is HIGH, CS# is HIGH between valid commands;  
All other Control and Address bus inputs are changing  
once every two clock cycles; DQ inputs changing once  
per clock cycle  
OPERATING READ CURRENT:  
mA  
IDD4R  
720  
630  
All device banks open, Continuous burst reads; One  
module rank active; IOUT = 0mA; BL = 4, CL = CL (IDD),  
AL = 0; tCK = tCK (IDD), tRAS = tRAS MAX (IDD), tRP = tRP  
(IDD); CKE is HIGH, CS# is HIGH between valid  
commands; Address bus inputs are changing once  
every two clock cycles; DQ inputs changing once per  
clock cycle  
Swissbit AG  
Industriestrasse 4  
CH-9552 Bronschhofen  
Fon: +41 (0) 71 913 03 03  
Fax: +41 (0) 71 913 03 15  
www.swissbit.com  
eMail: info@swissbit.com  
Page 7  
of 15  

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