生命周期: | Active | 包装说明: | O-PELF-R2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.65 |
其他特性: | FREE WHEELING DIODE | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JEDEC-95代码: | DO-213AA |
JESD-30 代码: | O-PELF-R2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 最大输出电流: | 1 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | LONG FORM | 最大重复峰值反向电压: | 80 V |
表面贴装: | YES | 技术: | SCHOTTKY |
端子形式: | WRAP AROUND | 端子位置: | END |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SGL1K-HM32 | GOOD-ARK |
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Rectifier Diode | |
SGL25N120RUF | FAIRCHILD |
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Short Circuit Rated IGBT | |
SGL25N120RUFD | FAIRCHILD |
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Short Circuit Rated IGBT | |
SGL25N120RUFDTU | FAIRCHILD |
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暂无描述 | |
SGL25N120RUFTU | FAIRCHILD |
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Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-264AA, TO-264, | |
SGL25N120RUFTU_NL | FAIRCHILD |
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Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-264AA, LEAD FRE | |
SGL2A_15 | GOOD-ARK |
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Surface Mount Schottky Barrier Rectifier | |
SGL30N60RUFD | FAIRCHILD |
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Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 | |
SGL30N60RUFD | SAMSUNG |
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Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-264, TO-264, 3 P | |
SGL34 | DIOTEC |
获取价格 |
Surface Mount Schottky-Rectifiers |