Datasheet > SGA-9289

SGA-9289

更新时间： 2024-01-21 08:45:13

品牌	Logo	应用领域
STANFORD		放大器射频微波
页数	文件大小	规格书
10页	162K
描述
Silicon Germanium HBT Amplifier

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SGA-9289 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.1
Is Samacsys：	N	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	11 dB
JESD-609代码：	e3	最大工作频率：	3000 MHz
最小工作频率：	50 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	WIDE BAND MEDIUM POWER
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

SGA-9289 数据手册

DESIGN APPLICATION NOTE --- AN022

SGA-9289 Amplifier Application Circuits

All HBT amplifiers are subject to device current

variation due to the decreasing nature of the internal

An active bias circuit can be implemented if the user

does not wish to sacrifice the voltage required by the

aforementioned passive circuit. There are various

active bias schemes suitable for HBTs. The user

should choose an active bias circuit that best meets

his cost, complexity and performance requirements.

with increasing temperature. In the absence of an

active bias circuit or resistive feedback, the decreasing

will result in increased base and collector

currents. As the collector current continues to increase

under constant V conditions the device may

eventually exceed its maximum dissipated power limit

resulting in permanent device damage. The designs

included in this application note contain passive bias

circuits that stabilize the device current over

temperature and desensitize the circuit to device

process variation.

Circuit Details

SMDI will provide the detailed layout (AutoCad format)

to users wishing to use the exact same layout and

PCB material shown in the following circuits. The

circuits recommended within this application note were

designed using the following PCB stack up:

The passive bias circuits used in these designs include

a dropping resistor in the collector bias line and a

voltage divider from collector-to-base. Using this

scheme the amplifier can be biased from a single

supply voltage. The collector-dropping resistor is sized

Material: GETEKä ML200C

Core thickness: 0.031”

Copper cladding: 1oz both sides

Dielectric constant: 4.1

Dielectric loss tangent: 0.0089 (@ 1 GHz)

to drop 2-3V depending on the desired V . The

voltage divider from collector-to-base, in conjunction

with the dropping resistor, will stabilize the device

current over temperature. Configuring the voltage

divider such that the shunt current is 5-10 times larger

than the desired base current desensitizes the circuit

to device process variation. These two feedback

mechanisms are sufficient to insure consistent

performance over temperature and device process

variations. Note that the voltage drop is clearly

dependent on the nominal collector current and can be

Customers not wishing to use the exact material and

layouts shown in this application note can design their

own PCB using the critical transmission line

impedances and phase lengths shown in the BOMs

and layouts.

adjusted to generate the desired V from a fixed

supply rail. The user should test the circuit over the

operational extremes to guarantee adequate

performance if the feedback mechanisms are reduced.

Vcc

V_DROP

I_c

I_B

V_CE

I_SHUNT

Passive Bias Circuit Topology

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

EAN-101535 Rev A

123 4 5 6 7...10

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