Datasheet > SG35N12T

SG35N12T

更新时间： 2022-04-06 16:06:49

品牌	Logo	应用领域
SIRECTIFIER		晶体双极型晶体管双极性晶体管栅
页数	文件大小	规格书
2页	119K
描述
绝缘栅双极型晶体管（IGBT）Isolated Gate Bipolar Transistor (IGBTs),IGBT分立器件Discrete IGBTs。

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SG35N12T 数据手册

SG35N12T, SG35N12DT

Discrete IGBTs

=25^o

C, unless otherwise specified)

Characteristic Values

Symbol

Test Conditions

Unit

min.

typ.

max.

gts

C=IC90; VCE=10V

Pulse test, t 300us, duty cycle 2%

ies

4620

260

oes

CE=25V; VGE=0V; f=1MHz

res

170

IC=IC90; VGE=15V; VCE=0.5VCES

d(on)

d(off)

off

d(on)

Inductive load, T

=25^o

C=IC90; VGE=15V;

CE=0.8VCES'; R =Roff=5

180

160

3.8

280

320

7.3

Remarks:Switching times may increase

for VCE(Clamp) 0.8VCES' higher T or

increased R

Inductive load, T C

=125^o

C=IC90; VGE=15V;

CE=0.8VCES'; R =Roff=5

2.6

300

360

8.0

d(off)

Remarks:Switching times may increase

for VCE(Clamp) 0.8VCES' higher T or

increased R

off

K/W

thJC

0.42

thCK

0.25

=25^o

C, unless otherwise specified)

Reverse Diode (FRED)

Symbol

Characteristic Values

Test Conditions

Unit

min.

typ.

max.

=30A; TVJ=150^o

VJ=25^o

2.2

2.55

=540V; IF=30A; -di

/dt=240A/us

0.05uH; TVJ=100^o

F=1A; -di/dt=100A/us; V

=30V; TVJ=25^o

thJC

0.9

K/W

中文翻译

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