SFH615A
5.3 kV TRIOS Optocoupler
High Reliability
FEATURES
Dimensions in inches (mm)
2
• Variety of Current Transfer Ratios at I =10 mA
F
– SFH615A-1, 40–80%
– SFH615A-2, 63–125%
– SFH615A-3, 100–200%
– SFH615A-4, 160–320%
– SFH615A-12, 40–125%
– SFH615A-23, 63–200%
– SFH615A-34, 100–320%
– SFH615A-13, 40–200%
– SFH615A-24, 63–320%
– SFH615A-14, 40–320%
• Low CTR Degradation
• Good CTR Linearity Depending on Forward
Current
1
pin one ID
.255 (6.48)
.268 (6.81)
Anode
Collector
Emitter
1
2
4
3
Cathode
3
4
.179 (4.55)
.190 (4.83)
.300 (7.62) typ.
.031 (.79) typ.
.030 (.76)
.045 (1.14)
.050 (1.27) typ.
.130 (3.30)
.150 (3.81)
.230 (5.84)
.250 (6.35)
• Withstand Test Voltage, 5300 V
RMS
• High Collector-Emitter Voltage, V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Temperature Stable
=70 V
10°
CEO
4°
.110 (2.79)
.130 (3.30)
typ.
.020 (.508 )
.035 (.89)
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.050 (1.27)
0.100 (2.54)
• Low Coupling Capacitance
Maximum Ratings
Emitter
Reverse Voltage ...............................................................................6.0 V
DC Forward Current ...................................................................... 60 mA
• End-Stackable, .100" (2.54 mm) Spacing
• High Common-Mode Interference Immunity
(Unconnected Base)
Surge Forward Current (t ≤10 µs)....................................................2.5 A
Total Power Dissipation.............................................................. 100 mW
Detector
• Underwriters Lab File #52744
P
VE
D
•
VDE 0884 Available with Option 1
Collector-Emitter Voltage...................................................................70 V
Emitter-Collector Voltage..................................................................7.0 V
Collector Current ........................................................................... 50 mA
DESCRIPTION
The SFH615A features a large variety of transfer ratio,
low coupling capacitance and high isolation voltage.
These couplers have a GaAs infrared emitting diode
emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a plas-
tic DIP-4 package.
Collector Current (t ≤1.0 ms) ...................................................... 100 mA
P
Total Power Dissipation.............................................................. 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
The coupling devices are designed for signal transmis-
sion between two electrically separated circuits.
part 2, Nov. 74, t=1.0 s....................................................... 5300 V
RMS
Creepage....................................................................................≥7.0 mm
Clearance....................................................................................≥7.0 mm
Insulation Thickness between Emitter and Detector .................≥0.4 mm
Comparative Tracking Index
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of >8.0 mm are
achieved with option 6. This version complies with IEC
950 (DIN VDE 0805) for reinforced insulation up to an
per DIN IEC 112/VDE0 303, part 1................................................≥175
Isolation Resistance
12
V =500 V, T =25°C ................................................................≥10
Ω
Ω
IO
A
11
operation voltage of 400 V
or DC.
RMS
V =500 V, T =100°C ..............................................................≥10
IO
A
Storage Temperature Range..............................................–55 to +150°C
Ambient Temperature Range ............................................–55 to +100°C
Junction Temperature..................................................................... 100°C
Soldering Temperature (max. 10 s. Dip Soldering
Specifications subject to change.
Distance to Seating Plane ≥1.5 mm) .......................................... 260°C
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
1
February 23, 2000-14
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