Datasheet > SFF4393A2GWS

SFF4393A2GWS

更新时间： 2023-03-15 00:00:00

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	73K
描述
RF Small Signal Field-Effect Transistor, 2-Element, Silicon, N-Channel, Junction FET, GW, MICRO MINIATURE PACKAGE-6

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SFF4393A2GWS 数据手册

SFF4393A2GW

Solid State Devices, Inc.

14830 Valley View Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Dual Microminiature Package

50 mA 40 Volts

Dual N-Channel JFET Transistor

DESIGNER’S DATA SHEET

Part Number / Ordering Information ^1/

Features:

Low ON Resistance

Low Capacitance, < 4 pF

Fast Switching, t_on< 5 ns

Used for Analog Switches, Choppers, Current

Limiters, and Sample-and-Hold Applications

TX, TXV, and S-Level Screening Available.

Consult Factory.

SFF4393A2 __ __

│

•

│

└ Screening ^2/__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

•

└ Package GW = GULLWING

Maximum Ratings

Symbol

Value

Units

Drain – Source Voltage

Drain – Gate Voltage

Reverse Gate – Source Voltage

Drain Current

V_DS

V_DG

V_SG

I_D

Volts

Per Device

Total

500

660

Power Dissipation @ T_A= 25^oC

Maximum Thermal Resistance

P_D

ºC/W

Junction to Ambient

245

R_ΘJA

T_L

T_{OP &}T_STG

Lead Temperature

(1/16” from the seated surface for 60 seconds)

ºC

300

Operating & Storage Temperature

-65 to +200

PACKAGE OUTLINE: GULLWING (GW)

2x .050

(=.100)

.015

3x .015

6x .030

6x .010

.015±.010

I D S S

5x R.018

.350

±.010

.107

.125

.034

.193

.025

.040

±.010

.107

.130

.010

6x R.010

.033

.035

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: FT0010B

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