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SF30BG PDF预览

SF30BG

更新时间: 2024-09-24 20:18:15
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
4页 47K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,

SF30BG 技术参数

生命周期:ActiveReach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.28
其他特性:HIGH CURRENT CAPABILITY, UL FLAMMABILITY应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201ADJESD-30 代码:O-LALF-W2
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:3 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.035 µs表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

SF30BG 数据手册

 浏览型号SF30BG的Datasheet PDF文件第2页浏览型号SF30BG的Datasheet PDF文件第3页浏览型号SF30BG的Datasheet PDF文件第4页 
SF30AG–SF30JG  
Vishay Lite–On Power Semiconductor  
3.0A Super–Fast Glass Passivated Rectifiers  
Features  
Glass passivated die construction  
Diffused junction  
Super–fast switching for high efficiency  
High current capability and low forward voltage  
drop  
Surge overload rating to 150A peak  
Low reverse leakage current  
14 423  
Plastic material – UL Recognition flammability  
classification 94V–0  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
Symbol  
Value  
50  
Unit  
V
V
V
V
V
V
V
V
Repetitive peak reverse voltage  
=Working peak reverse voltage  
=DC Blocking voltage  
SF30AG  
SF30BG  
SF30CG  
SF30DG  
SF30FG  
SF30GG  
SF30HG  
SF30JG  
V
RRM  
=V  
100  
150  
200  
300  
400  
500  
600  
150  
3
RWM  
=V  
R
Peak forward surge current  
Average forward current  
I
A
A
FSM  
T =55 C  
A
I
FAV  
Junction and storage temperature range  
T =T  
–65...+150  
C
j
stg  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Test Conditions  
I =3A  
Type  
Symbol Min  
Typ Max Unit  
Forward voltage  
Reverse current  
SF30AG–DG  
SF30FG–GG  
SF30HG–JG  
V
F
V
F
V
F
0.95  
1.3  
1.5  
10  
V
V
V
F
T =25 C  
I
I
A
A
R
T =100 C  
A
100  
35  
A
ns  
R
Reverse recovery time I =1A, I =0.5A,  
SF30AG–DG  
SF30FG–GG  
SF30HG–JG  
SF30AG–GG  
SF30HG–JG  
t
rr  
t
rr  
t
rr  
F
R
I =0.25A  
rr  
40  
ns  
50  
ns  
Diode capacitance  
V =4V, f=1MHz  
R
C
C
75  
50  
32  
pF  
pF  
K/W  
D
D
Thermal resistance  
junction to ambient  
R
thJA  
Rev. A2, 24-Jun-98  
1 (4)  

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