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SF2002G

更新时间： 2024-11-26 02:58:15
品牌 Logo 应用领域
THINKISEMI 局域网功效瞄准线二极管
页数 文件大小 规格书
2页 650K
描述
20.0 Ampere Dual Unipolar-Doubler Polarity Superfast Recovery Diode

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SF2002G 数据手册

 浏览型号SF2002G的Datasheet PDF文件第2页 
SF2001G thru SF2008G  
®
SF2001G thru SF2008G  
Pb Free Plating Product  
20.0 Ampere Dual Unipolar-Doubler Polarity Superfast Recovery Diode  
Unit : inch (mm)  
TO-220AB  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
.139(3.55)  
MIN  
¬ Fast switching for high efficiency  
¬ Low forward voltage drop  
¬ High current capability  
¬ Low reverse leakage current  
¬ High surge current capability  
.054(1.39)  
.045(1.15)  
Mechanical Data  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
¬ Case: TO-220AB Heatsink  
¬ Epoxy: UL 94V-0 rate flame retardant  
¬ Terminals: Solderable per MIL-STD-202  
method 208  
.1(2.54)  
.1(2.54)  
¬ Polarity: As marked on body  
¬ Mounting position: Any  
¬ Weight: 2.24 gram approximately  
Case  
Case  
Case  
Doubler  
Negative  
Common Anode  
Suffix "A"  
Positive  
Common Cathode  
Series Connection  
Suffix "D"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
o
Rating at 25  
C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SF2001G  
SF2002G SF2004G  
SF2005G SF2006G SF2008G  
Common Cathode  
UNIT  
SYMBOL  
SF2001GA SF2002GA SF2004GA SF2005GA SF2006GA SF2008GA  
SF2001GD SF2002GD SF2004GD SF2005GD SF2006GD SF2008GD  
Common Anode Suffix"A"  
Anode and Cathode Coexistence Suffix "D"  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
Maximum RMS Voltage  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Rectified  
Current TC=125oC  
20.0  
A
A
V
IF(AV)  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
200  
175  
Maximum Instantaneous Forward Voltage  
@ 10.0 A  
VF  
IR  
0.975  
1.3  
1.5  
Maximum DC Reverse Current @TJ=25oC  
At Rated DC Blocking Voltage @TJ=125oC  
uA  
uA  
nS  
10.0  
250  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Trr  
CJ  
35  
pF  
oC  
120  
70  
Operating Junction and Storage  
Temperature Range  
-55 to +150  
T
J
, TSTG  
NOTES : (1) Reverse recovery test conditions I  
F
= 0.5A, I  
R
= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Page 1/2  
http://www.thinkisemi.com/  
© 2006 Thinki Semiconductor Co.,Ltd.  
12

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