Datasheet > SE3406

SE3406

更新时间： 2024-02-20 05:14:38

品牌	Logo	应用领域
威伦 - WILLAS		/
页数	文件大小	规格书
3页	318K
描述
SOT-23 Plastic-Encapsulate MOSFETS

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SE3406 数据手册

WILLAS

SE3406

SOT-23 Plastic-Encapsulate MOSFETS

N-Channel Enhancement Mode Field Effect Transistor

SOT-23

DESCRIPTION

The SE3406 use advanced trench technology to provide excellent

1. GATE

2. SOURCE

3. DRAIN

R_DS(ON)and low gate charge. This device is suitable for use as a

load switch or in PWM applications.

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

MARKING: R6

Maximum ratings ( T_a=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

±20

Continuous Drain Current

Drain Current-Pulsed (note 1)

Power Dissipation

3.6

I_DM

P_D

0.35

357

℃/W

℃

Thermal Resistance from Junction to Ambient

Junction Temperature

R_θJA

T_J

150

Storage Temperature

T_STG

-55~ +150

℃

2012-10

WILLAS ELECTRONIC CORP.

12 3

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