Datasheet > SE3407

SE3407

更新时间： 2024-09-28 12:23:55

品牌	Logo	应用领域
威伦 - WILLAS		/
页数	文件大小	规格书
4页	412K
描述
SOT-23 Plastic-Encapsulate MOSFETS

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SE3407 数据手册

WILLAS

SE3407

SOT-23 Plastic-Encapsulate MOSFETS

P-Channel Enhancement Mode Field Effect Transistor

SOT-23

General Description

The SE3407 uses advanced trench technology to provide excellent

R_DS(on)with low gate charge. This device is suitable for use as a load

switch or in PWM applications.

1. GATE

2. SOURCE

3. DRAIN

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

MARKING: 3407

Maximum ratings (T_a=25℃ unless otherwise noted)

Parameter

Symbol

Value

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

±20

-4.1

Continuous Drain Current

Power Dissipation

P_D

350

℃/W

℃

Thermal Resistance from Junction to Ambient

Junction Temperature

R_θJA

T_J

357

150

Storage Temperature

T_stg

-55~+150

℃

2012-10

WILLAS ELECTRONIC CORP.

12 3 4

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