Datasheet > SE3404

SE3404

更新时间： 2024-01-18 04:18:51

品牌	Logo	应用领域
威伦 - WILLAS		/
页数	文件大小	规格书
4页	391K
描述
SOT-23 Plastic-Encapsulate MOSFETS

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SE3404 数据手册

WILLAS

SE3404

SOT-23 Plastic-Encapsulate MOSFETS

N-Channel Enhancement Mode Field Effect Transistor

SOT-23

DESCRIPTION

The SE3404 use advanced trench technology to provide excellent

R_DS(ON)and low gate charge. This device is suitable for use as a load

switch or in PWM applications.The source leads are separated to allow a

Kelvin connection to the source,which may be used to bypass the source

inductance.

1. GATE

2. SOURCE

3. DRAIN

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

MARKING: R4

Maximum ratings (T_a=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-source voltage

Gate-source voltage

V_DS

V_GS

I_D

±20

Continuous drain current (t ≤10s)

Pulsed drain current *

5.8

I_DM

P_D

Power dissipation

0.35

357

℃/W

℃

Thermal resistance from junction to ambient

Junction temperature

R_θJA

T_J

150

Storage temperature

T_stg

-55~ 150

℃

* Repetitive rating : Pulse width limited by maximum junction temperature.

2012-09

WILLAS ELECTRONIC CORP.

12 3 4

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