5秒后页面跳转
SDR624CTZ PDF预览

SDR624CTZ

更新时间: 2024-10-03 17:16:43
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
2页 80K
描述
40 A, 400 V Hyperfast Recovery Centertap Rectifier

SDR624CTZ 技术参数

生命周期:Active零件包装代码:TO-254Z
包装说明:TO-254Z, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.6
应用:HYPER FAST RECOVERY配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.55 VJESD-30 代码:S-MSFM-P3
最大非重复峰值正向电流:300 A元件数量:2
相数:1端子数量:3
最高工作温度:200 °C最大输出电流:40 A
封装主体材料:METAL封装形状:SQUARE
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
Base Number Matches:1

SDR624CTZ 数据手册

 浏览型号SDR624CTZ的Datasheet PDF文件第2页 
SDR623CTM & Z  
Thru  
SDR626DRM & Z  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
Designer’s Data Sheet  
40A 35nsec 300-600 V  
Hyper Fast Centertap Rectifier  
Part Number/Ordering Information 1/  
__ __ __ __ __  
SDR62  
¦
¦
¦
¦
¦
¦
¦
+
+
Screening 2/ __ = Not Screened  
¦
¦
¦
¦
¦
+
¦
¦
¦
¦
¦
¦
¦
¦
¦
¦
¦
¦
¦
¦
¦
¦
TX = TX Level  
TXV = TXV Level  
S = S Level  
Features:  
·
·
·
·
·
·
·
·
Hyper Fast Recovery: 35nsec Maximum 3/  
High Surge Rating  
Low Reverse Leakage Current  
Low Junction Capacitance  
Hermetically Sealed Package  
Gold Eutectic Die Attach  
Leg Bend Option  
(See Figure 1)  
Package M = TO-254, Z = TO-254Z  
¦
¦
¦
Configuration CT = Common Cathode,  
CA = Common Anode, D = Doubler,  
Ultrasonic Aluminum Wire Bonds  
+
Available in Common Anode, Common Cathode,  
Doubler, and Doubler Reverse Configurations  
Ceramic Seal for Improved Hermeticity Available  
¦
+
DR = Doubler Reverse  
Voltage 3 = 300V, 4 = 400V, 5 = 500V, 6 = 600V  
·
·
TX, TXV, and S-Level Screening Available 2/  
Maximum Ratings  
Symbol  
Value  
Units  
300  
400  
500  
600  
SDR623__M & Z  
SDR624__M & Z  
SDR625__M & Z  
SDR626__M & Z  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Volts  
Average Rectified Forward Current  
40  
Io  
Amps  
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C) 4/  
Peak Surge Current  
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)  
200  
IFSM  
Amps  
ºC  
5/  
-65 to +200  
Operating & Storage Temperature  
TOP & TSTG  
Maximum Total Thermal Resistance  
Junction to Case 4/  
1.0  
2.0  
RqJC  
ºC/W  
Junction to Case 5/  
-
Notes:  
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.  
2/ Screened to MIL-PRF-19500.  
3/ Recovery Conditions: I = 0.5 Amp, IR = 1.0 Amp, rec. to .25 Amp.  
F
4/ Both Legs Tied Together.  
5/ Per Leg.  
-
TO -254 (M)  
-
TO -254Z (Z)  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RH0049C  
DOC  

与SDR624CTZ相关器件

型号 品牌 获取价格 描述 数据表
SDR624CTZDB SSDI

获取价格

Rectifier Diode, 1 Phase, 2 Element, 40A, 400V V(RRM), Silicon, TO-254Z, 3 PIN
SDR624CTZS SSDI

获取价格

Rectifier Diode, 40A, 400V V(RRM),
SDR624CTZTX SSDI

获取价格

Rectifier Diode, 40A, 400V V(RRM),
SDR624CTZTXV SSDI

获取价格

Rectifier Diode, 40A, 400V V(RRM),
SDR624CTZUBS SSDI

获取价格

Rectifier Diode,
SDR624CTZUBTX SSDI

获取价格

Rectifier Diode,
SDR624CTZUS SSDI

获取价格

Rectifier Diode, 40A, 400V V(RRM),
SDR624CTZUTX SSDI

获取价格

Rectifier Diode, 40A, 400V V(RRM),
SDR624CTZUTXV SSDI

获取价格

Rectifier Diode, 40A, 400V V(RRM),
SDR624DJ SSDI

获取价格

40 A, 400 V Hyperfast Recovery Centertap Rectifier