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SDR624DJ PDF预览

SDR624DJ

更新时间: 2024-10-03 17:16:43
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
2页 61K
描述
40 A, 400 V Hyperfast Recovery Centertap Rectifier

SDR624DJ 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.06应用:HYPER FAST RECOVERY
外壳连接:ISOLATED配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.7 VJEDEC-95代码:TO-257
JESD-30 代码:R-XSFM-P3最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:3最高工作温度:200 °C
最低工作温度:-65 °C最大输出电流:20 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:400 V
最大反向电流:50 µA最大反向恢复时间:0.035 µs
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLEBase Number Matches:1

SDR624DJ 数据手册

 浏览型号SDR624DJ的Datasheet PDF文件第2页 
SDR623CTJ  
Thru  
SDR626DRJ  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
Designer’s Data Sheet  
40A 35nsec 300-600 V  
Hyper Fast Centertap Rectifier  
Part Number/Ordering Information 1/  
__ __ __ __ __  
SDR62  
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+
+
Screening 2/ __ = Not Screened  
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+
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TX = TX Level  
TXV = TXV Level  
S = S Level  
Features:  
·
·
·
·
·
·
·
·
Hyper Fast Recovery: 35nsec Maximum 3/  
High Surge Rating  
Low Reverse Leakage Current  
Low Junction Capacitance  
Isolated Hermetically Sealed Package  
Gold Eutectic Die Attach  
Ultrasonic Aluminum Wire Bonds  
Leg Bend Option  
(See Figure 1)  
Package J = TO-257(J)  
¦
¦
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Configuration CT = Common Cathode,  
CA = Common Anode, D = Doubler,  
+
Availabl e in Common Anode, Common Cathode,  
Doubler, and Doubler Reverse Configurations  
Custom Lead Forming Available  
¦
+
DR = Doubler Reverse  
Voltage 3 = 300V, 4 = 400V, 5 = 500V, 6 = 600V  
·
·
TX, TXV, and S-Level Screening Available 2/  
Maximum Ratings  
Symbol  
Value  
Units  
300  
400  
500  
600  
SDR623__J  
SDR624__J  
SDR625__J  
SDR626__J  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Volts  
Average Rectified Forward Current  
40  
Io  
Amps  
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C) 4/  
Peak Surge Current  
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)  
200  
IFSM  
Amps  
ºC  
5/  
-65 to +175  
Operating & Storage Temperature  
TOP & TSTG  
Maximum Total Thermal Resistance  
Junction to Case 4/  
1.0  
2.1  
RqJC  
ºC/W  
Junction to Case 5/  
-
Notes:  
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.  
2/ Screened to MIL-PRF-19500.  
3/ Recovery Conditions: I = 0.5 Amp, IR = 1.0 Amp, rec. to .25 Amp.  
F
4/ Both Legs Tied Together.  
5/ Per Leg.  
TO -257(J)  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RH0051D  
DOC  

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