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SDR623CAM PDF预览

SDR623CAM

更新时间: 2024-09-26 17:16:43
品牌 Logo 应用领域
SSDI /
页数 文件大小 规格书
2页 80K
描述
40 A, 300 V Hyperfast Recovery Centertap Rectifier

SDR623CAM 技术参数

生命周期:Active零件包装代码:TO-254AA
包装说明:TO-254, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.6
应用:HYPER FAST RECOVERY配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.55 VJEDEC-95代码:TO-254AA
JESD-30 代码:S-MSFM-P3最大非重复峰值正向电流:300 A
元件数量:2相数:1
端子数量:3最高工作温度:200 °C
最大输出电流:40 A封装主体材料:METAL
封装形状:SQUARE封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:300 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLEBase Number Matches:1

SDR623CAM 数据手册

 浏览型号SDR623CAM的Datasheet PDF文件第2页 
SDR623CTM & Z  
Thru  
SDR626DRM & Z  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
Designer’s Data Sheet  
40A 35nsec 300-600 V  
Hyper Fast Centertap Rectifier  
Part Number/Ordering Information 1/  
__ __ __ __ __  
SDR62  
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+
+
Screening 2/ __ = Not Screened  
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+
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TX = TX Level  
TXV = TXV Level  
S = S Level  
Features:  
·
·
·
·
·
·
·
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Hyper Fast Recovery: 35nsec Maximum 3/  
High Surge Rating  
Low Reverse Leakage Current  
Low Junction Capacitance  
Hermetically Sealed Package  
Gold Eutectic Die Attach  
Leg Bend Option  
(See Figure 1)  
Package M = TO-254, Z = TO-254Z  
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¦
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Configuration CT = Common Cathode,  
CA = Common Anode, D = Doubler,  
Ultrasonic Aluminum Wire Bonds  
+
Available in Common Anode, Common Cathode,  
Doubler, and Doubler Reverse Configurations  
Ceramic Seal for Improved Hermeticity Available  
¦
+
DR = Doubler Reverse  
Voltage 3 = 300V, 4 = 400V, 5 = 500V, 6 = 600V  
·
·
TX, TXV, and S-Level Screening Available 2/  
Maximum Ratings  
Symbol  
Value  
Units  
300  
400  
500  
600  
SDR623__M & Z  
SDR624__M & Z  
SDR625__M & Z  
SDR626__M & Z  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Volts  
Average Rectified Forward Current  
40  
Io  
Amps  
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C) 4/  
Peak Surge Current  
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)  
200  
IFSM  
Amps  
ºC  
5/  
-65 to +200  
Operating & Storage Temperature  
TOP & TSTG  
Maximum Total Thermal Resistance  
Junction to Case 4/  
1.0  
2.0  
RqJC  
ºC/W  
Junction to Case 5/  
-
Notes:  
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.  
2/ Screened to MIL-PRF-19500.  
3/ Recovery Conditions: I = 0.5 Amp, IR = 1.0 Amp, rec. to .25 Amp.  
F
4/ Both Legs Tied Together.  
5/ Per Leg.  
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TO -254 (M)  
-
TO -254Z (Z)  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RH0049C  
DOC  

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