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SDM-08060-B1FY

更新时间： 2024-09-22 06:10:59
品牌 Logo 应用领域
SIRENZA 放大器功率放大器
页数 文件大小 规格书
5页 122K
描述
869-894 MHz Class AB 65W Power Amplifier Module

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SDM-08060-B1F  
SDM-08060-B1FY  
869-894 MHz Class AB  
65W Power Amplifier Module  
Product Description  
RoHS Compliant  
& Green Package  
Pb  
Sirenza Microdevices’ SDM-08060-B1F 65W power module is a  
robust, impedance matched, single-stage, push-pull Class AB amplifier  
module suitable for use as a power amplifier driver or output stage.  
The power transistors are fabricated using Sirenza's latest, high perfor-  
mance LDMOS process. It is a drop-in, no-tune solution for high  
power applications requiring high efficiency, excellent linearity, and  
unit-to-unit repeatability. It is internally matched to 50 ohms.  
Functional Block Diagram  
+3V DC to +6 V DC  
+28V DC  
Vgs1  
Gnd  
Vds1  
Gnd  
180o  
0o  
Product Features  
• Available in RoHS compliant packaging  
Balun  
Balun  
• 50 W RF impedance  
RF  
RF  
out  
in  
• 65W Output P1dB  
• Single Supply Operation : Nominally 28V  
• High Gain: 17 dB at 880 MHz  
Gnd  
Gnd  
0o  
180o  
• High Efficiency: 46% at 880 MHz  
Vds2  
+3V DC to +6 V DC  
+28V DC  
Vgs2  
• ESD Protection: JEDEC Class 2 (2000V HBM)  
Applications  
• Base Station PA driver  
• Repeater  
Case Flange = Ground  
• CDMA  
• GSM / EDGE  
Key Specifications  
Symbol  
Frequency  
P1dB  
Parameter  
Units  
MHz  
W
Min.  
869  
60  
Typ.  
-
Max.  
Frequency of Operation  
894  
Output Power at 1dB Compression, 881 MHz  
Gain at 12W CDMA Output (Single Carrier IS-95), 881MHz  
Peak to Peak Gain Variation, 869 - 894MHz  
Drain Efficiency at 60W PEP, 880MHz and 881MHz  
Drain Efficiency at 60W CW, 880MHz  
65  
-
Gain  
dB  
16  
17  
-
0.5  
-
Gain Flatness  
Efficiency  
Efficiency  
IRL  
dB  
-
0.3  
34  
%
32  
%
46  
-
Input Return Loss 12W CW Output Power, 869 - 894MHz  
3rd Order IMD Product, 60W PEP, 880MHz and 881MHz  
Signal Delay from Pin 3 to Pin 8  
dB  
-
-
-
-
-15  
-31  
4.0  
0.5  
1.5  
-10  
-28  
-
IMD  
dBc  
nS  
Delay  
Phase Linearity  
RTH  
Deviation from Linear Phase (Peak to Peak)  
Thermal Resistance (Junction to Case)  
Deg  
ºC/W  
-
T
Test Conditions Zin = Zout = 50Ω, VDD = 28.0V, IDQ1 = IDQ2 =300mA TFlange = 25ºC  
Quality Specifications  
Parameter  
ESD Rating  
MTTF  
Description  
Unit  
Volts  
Hours  
Typical  
2000  
1.2 X 106  
Human Body Model  
200oC Channel  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such  
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices  
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.  
303 S. Technology Court,  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-104208 Rev F  
12345

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