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SDM-09120_1

更新时间： 2024-09-22 06:10:59
品牌 Logo 应用领域
SIRENZA 放大器功率放大器
页数 文件大小 规格书
5页 92K
描述
925-960 MHz Class AB 130W Power Amplifier Module

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SDM-09120_1 数据手册

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SDM-09120  
RoHS Compliant  
& Green Package  
Pb  
Product Description  
SDM-09120Y  
Sirenza Microdevices’ SDM-09120 130W power module is a robust  
impedance matched, single-stage, push-pull Class AB amplifier mod-  
ule suitable for use as a power amplifier driver or output stage. The  
power transistors are fabricated using Sirenza's latest, high perfor-  
mance LDMOS process. It is a drop-in, no-tune solution for high power  
applications requiring high efficiency, excellent linearity, and unit-to-  
unit repeatability. It is internally matched to 50 ohms.  
925-960 MHz Class AB  
130W Power Amplifier Module  
Functional Block Diagram  
+3V DC to +6 V DC  
+28V DC  
Vgs1  
Vds1  
Gnd  
180o  
0o  
Gnd  
Product Features  
Balun  
Balun  
• Available in RoHS compliant packaging  
RF  
RF  
out  
in  
• 50 W RF impedance  
• 130W Output P1dB  
Gnd  
Gnd  
• Single Supply Operation : Nominally 28V  
• High Gain: 15 dB at 942 MHz  
• High Efficiency: 42% at 942 MHz  
0o  
180o  
Vds2  
+3V DC to +6 V DC  
+28V DC  
Vgs2  
Applications  
• Base Station PA driver  
• Repeater  
Case Flange = Ground  
• CDMA  
• GSM / EDGE  
Key Specifications  
Symbol  
Frequency  
P1dB  
Parameter  
Units  
MHz  
W
Min.  
Typ.  
-
Max.  
Frequency of Operation  
925  
960  
Output Power at 1dB Compression, 943 MHz  
120W PEP Output Power, 942MHz and 943MHz  
Peak-to-Peak Gain Variation, 120W PEP, 925 - 960MHz  
Input Return Loss, 120W PEP Output Power, 925 - 960MHz  
3rd Order Product. 120W PEP Output, 942MHz and 943MHz  
120W PEP Output, Change in Spacing 100KHz - 25MHz  
Drain Efficiency, 120W PEP Output, 942MHz and 943MHz  
Drain Efficiency, 120W CW Output, 943MHz  
120  
130  
15  
-
Gain  
dB  
14  
-
-
Gain Flatness  
IRL  
dB  
0.3  
-14  
-28  
1.0  
33  
0.5  
dB  
-
-12  
IMD  
dBc  
dB  
-
-26  
IMD Variation  
-
-
-
-
-
-
%
32  
-
Efficiency  
%
42  
Delay  
Phase Linearity  
RTH  
Signal Delay from Pin 3 to Pin 8  
nS  
-
4.0  
0.7  
0.7  
Deviation from Linear Phase (Peak-to-Peak)  
Deg  
ºC/W  
-
Thermal Resistance (Junction-to-Case)  
T
Test Conditions Zin = Zout = 50Ω, VDD = 28.0V, IDQ1 = IDQ2 =500mA TFlange = 25ºC  
Quality Specifications  
Parameter  
ESD Rating  
MTTF  
Description  
Unit  
Volts  
Hours  
Typical  
2000  
1.2 X 106  
Human Body Model  
200oC Channel  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such  
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices  
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2007 Sirenza Microdevices, Inc. All worldwide rights reserved.  
303 S. Technology Court,  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-103478 Rev G  
12345

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