SD040SC100A/B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 516, REV. A
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop
200°C Operating Temperature
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
•
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
•
•
•
•
•
•
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High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Out Performs 100 Volt Ultrafast Rectifiers
Maximum Ratings:
Characteristics
Symbol
VRWM
IF(AV)
Condition
-
Max.
100
1
Units
V
A
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
50% duty cycle, rectangular
wave form
IFSM
EAS
IAR
8.3 ms, half Sine wave (1)
20
2.0
A
mJ
A
TJ = 25 °C, IAS = 0.13 A,
L = 227mH
AS decay linearly to 0 in 1 µs
Repetitive Avalanche Current
0.13
I
ƒ limited by TJ max VA=1.5VR
Max. Junction Temperature
Max. Storage Temperature
TJ
Tstg
-
-
-65 to +200
-65 to +200
°C
°C
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Symbol
VF1
Condition
@ 1A, Pulse, TJ = 25 °C
@ 1A, Pulse, TJ = 125 °C
@VR = 100V, Pulse,
TJ = 25 °C
Max.
0.84
0.68
30
Units
V
V
VF2
IR1
Max. Reverse Current
µA
mA
pF
IR2
CT
@VR = 100V, Pulse,
TJ = 125 °C
0.6
35
Max. Junction Capacitance
(1) in SHD package
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
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