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SD004-11-41-211

更新时间： 2024-10-03 03:33:07
品牌 Logo 应用领域
ADVANCEDPHOTONIX 光电
页数 文件大小 规格书
1页 140K
描述
InGaAs Photodetectors

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SD004-11-41-211 技术参数

是否无铅： 不含铅生命周期：Contact Manufacturer
Reach Compliance Code：unknown风险等级：5.06
Is Samacsys：NBase Number Matches：1

SD004-11-41-211 数据手册

  
InGaAs Photodetectors  
SD 004-11-41-211  
PACKAGE DIMENSIONS INCH [mm]  
Ø 0.210 [5.33]  
0.029 [0.73]  
0.065 [1.66]  
4X Ø 0.019 [0.48]  
Ø 0.055 [1.40]  
1
3
Ø 0.184 [4.67]  
4
2
CHIP  
0.145 [3.69]  
0.50 [12.7]  
3 ANODE  
BOTTOM VIEW  
CHIP DIMENSIONS INCH [mm]  
4 CASE GROUND  
0.016 [0.40]  
1 CATHODE  
2 NOT USED  
0.016 [0.40]  
SCHEMATIC  
TO-46 PACKAGE  
Ø .0079 [.200] ACTIVE AREA  
FEATURES  
• Low noise  
• Low dark current  
• High response  
DESCRIPTION  
APPLICATIONS  
The SD 004-11-41-211 is a high sensitivity low noise  
characteristics InGaAs photodiode packaged in a  
leaded hermetic TO-46 metal package.  
• Communications  
• Industrial  
• Medical  
SPECTRAL RESPONSE  
ABSOLUTE MAXIMUM RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
1.2  
1
SYMBOL  
VBR  
PARAMETER  
MIN  
MAX  
75  
UNITS  
Reverse Voltage  
V
0.8  
0.6  
0.4  
0.2  
0
TSTG  
TO  
Storage Temperature  
Operating Temperature  
Soldering Temperature*  
-55  
-40  
+100  
+85  
°C  
°C  
°C  
TS  
+260  
* 1/16 inch from case for 3 seconds max.  
800  
900  
1000 1100 1200 1300 1400 1500 1600 1700  
Wavelength (nM)  
ELECTRO-OPTICAL CHARACTERISTICS RATING
(TA)= 23°C UNLESS OTHERWISE NOTED  
SYMBOL  
ID  
CHARACTERISTIC  
Dark Current  
Shunt Resistance  
Junction Capacitance  
Spectral Application Range  
Responsivity  
TEST CONDITIONS  
VR = 5V  
VR = 10 mV  
VR = 5V, f = 1 MHz  
Spot Scan  
MIN  
TYP  
MAX UNITS  
0.8  
1000  
0.75  
1.0  
nA  
MW  
pF  
RSH  
CJ  
lrange  
R
400  
0.95  
800  
1700  
nm  
l= 1310nm, VR = 5V  
I = 1μA  
VR = 5V @ l=1310nm  
RL = 50 Ω,VR = 5V  
0.83  
0.92  
18  
1.43X10-14  
A/W  
V
VBR  
NEP  
tr  
Breakdown Voltage  
Noise Equivalent Power  
Response Time**  
W/ √ Hz  
nS  
0.18  
**Response time of 10% to 90% is specified at 1310nm wavelength light.  
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are  
subject to change without notice.  
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com  
REV 1/16/07  
1

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