Datasheet > SD0103WS

SD0103WS

更新时间： 2024-10-03 06:10:35

品牌	Logo	应用领域
商升特 - SEMTECH		肖特基二极管
页数	文件大小	规格书
3页	173K
描述
SILICON SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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SD0103WS 数据手册

SD0103WS

SILICON SCHOTTKY BARRIER DIODE

Features

• Low forward voltage drop and suitable for high

effifiency rectifying

PINNING

DESCRIPTION

Cathode

• Ultra small resin package is suitable for high

density surface mounting and high speed assembly

Anode

Top View

Marking Code: "YF"

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Repetitive Peak Reverse Voltage

Mean Rectifying Current

V_RRM

I_O

100

Non-Repetitive Peak Forward Surge Current (8.3 ms Single

Half Sine Wave)

I_FSM

Junction Temperature

T_j

125

Storage Temperature Range

T_s

- 55 to + 125

Characteristics at T_a= 25 C

Parameter

Symbol

V_F

Max.

0.44

Unit

Forward Voltage

at I_F= 100 mA

Reverse Current

at V_R= 30 V

I_R

µA

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 01/11/2007

12 3

中文翻译

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