Datasheet > SBP1050

SBP1050

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
DAESAN		/
页数	文件大小	规格书
2页	381K
描述
CURRENT 10.0Amperes VOLTAGE 20 to 100 Volts

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数据手册

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SBP1050 数据手册

CURRENT 10.0Amperes

VOLTAGE 20 to 100 Volts

SBP1020 THRU SBP10100

Features

· Plastic Package has Underwriters Laboratory

Flammability Classification 94V-0

ITO-220

· Metal silicon junction, majority carrier conduction

· Guard ring for overvoltage protection

· Low power loss, high efficiency

0.2

0.1

0.2

4.5

0.5

3.2

0.2

2.7

· High current capability, Low forward voltage drop

· High surge capability

· For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

· Dual rectifier construction

· High temperature soldering guaranteed :

250℃/10 seconds, 0.25" (6.35mm) from case

0.2

1.3

0.2

0.7

2.54

0.5

2.4

Mechanical Data

0.2

2.54

· Case : JEDEC ITO-220 molded plastic body

· Terminals : Lead solderable per

PIN 1

PIN 3

PIN 1

PIN 3

MIL-STD-750, Method 2026

CASE

PIN 2

CASE

PIN 2

· Polarity : As marked. No suffix indicates Common

Cathode, suffix "A" indicates Common Anode

· Mounting Position : Any

Negative CT

Suffix "A"

Positive CT

Suffix "C"

· Weight : 0.08 ounce, 2.24 gram

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive

load. For capacitive load, derate by 20%)

SBP

Symbols

Units

Volts

1020

1030

1040

1050

1060

1080 10100

Maximum repetitive peak reverse voltage

Maximum RMS voltage

RRM

RMS

100

Maximum DC blocking voltage

VDC

100

Maximum average forward rectified current

(see Fig. 1)

I(AV

)

10.0

20.0

Amps

Repetitive peak forward current(square wavr,

20KHZ) at Tc=105℃

IFRM

Peak forward surge current 8.3ms single half

sine-wave superimposed on rated load

(JEDEC method)

IFSM

150.0

Amps

Maximum instantaneous forward voltage

at 5.0A (Note 1)

0.65

0.75

0.80

0.85

Volts

Maximum instantaneous reverse

current at rated DC blocking

voltage (Note1)

1.0

5.0

=25℃

=100℃

Typical thermal resistance (Note 2)

Operating junction temperature range

Storage temperature range

Notes:

RθJC

℃/W

℃

-65 to +125

-65 to +150

℃

STG

-65 to +150

(1) Pulse test: 300μS pulse width, 1% duty cycle

(2) Thermal resistance from junction to case

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