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SBCT2020_11 PDF预览

SBCT2020_11

更新时间: 2024-09-29 09:34:23
品牌 Logo 应用领域
德欧泰克 - DIOTEC 整流二极管
页数 文件大小 规格书
2页 122K
描述
Schottky Barrier Rectifier Diodes – Common Cathode

SBCT2020_11 数据手册

 浏览型号SBCT2020_11的Datasheet PDF文件第2页 
SBCT2020 ... SBCT20100  
SBCT2020 ... SBCT20100  
Schottky Barrier Rectifier Diodes – Common Cathode  
Schottky-Barrier-Gleichrichterdioden – Gemeinsame Kathode  
Version 2011-04-08  
Nominal Current  
Nennstrom  
20 A  
10.1±0.3  
1.2±0.2  
Ø 3.8±0.2  
4
4
2
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
20...100 V  
4.5±0.2  
Type  
Typ  
Plastic case – Kunststoffgehäuse  
TO-220AB  
2.2g  
1 2 3  
Weight approx.  
Gewicht ca.  
2.67±0.2  
0.42±0.4  
1.3±0.1  
0.8±0.2  
1
3
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
2.54±0.1  
Standard packaging in tubes  
Standard Lieferform in Stangen  
Dimensions - Maße [mm]  
Maximum ratings and Characteristics  
Grenz- und Kennwerte  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung Stoßspitzensperrspannung  
Surge peak reverse voltage  
Forward Voltage  
Durchlass-Spannung  
VF [V] 1) 2)  
VRRM [V]  
VRSM [V]  
IF = 5 A  
< 0.52  
< 0.52  
< 0.52  
< 0.52  
< 0.63  
< 0.63  
< 0.77  
< 0.77  
IF = 10 A  
< 0.55  
< 0.55  
< 0.55  
< 0.55  
< 0.70  
< 0.70  
< 0.85  
< 0.85  
SBCT2020  
SBCT2030  
SBCT2040  
SBCT2045  
SBCT2050  
SBCT2060  
SBCT2090  
SBCT20100  
20  
30  
20  
30  
40  
40  
45  
45  
50  
50  
60  
60  
90  
90  
100  
100  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TC = 100°C  
f > 15 Hz  
IFAV  
IFAV  
10 A 2)  
20 A 3)  
Repetitive peak forward current  
Periodischer Spitzenstrom  
IFRM  
30 A 2)  
130/150 A 2)  
110/125 A 2)  
80 A2s 2)  
Peak forward surge current, 50/60 Hz half sine-wave SBCT2020... TA = 25°C  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle SBCT2060  
IFSM  
IFSM  
i2t  
Peak forward surge current, 50/60 Hz half sine-wave SBCT2080... TA = 25°C  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle SBCT20100  
Rating for fusing, t < 10 ms – Grenzlastintegral, t < 10 ms  
TA = 25°C  
Junction temperature – Sperrschichttemperatur  
Tj  
Tj  
-50...+150°C  
≤ 200°C  
in DC forward mode – bei Gleichstrom-Durchlassbetrieb  
1
Tj = 25°C  
2
3
Per diode − Pro Diode  
Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 
 

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