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SBCT1045 PDF预览

SBCT1045

更新时间: 2024-09-29 03:33:35
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德欧泰克 - DIOTEC /
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2页 114K
描述
Schottky Barrier Rectifiers - Common Cathode

SBCT1045 数据手册

 浏览型号SBCT1045的Datasheet PDF文件第2页 
SBCT1020 ... SBCT10100  
SBCT1020 ... SBCT10100  
Schottky Barrier Rectifiers – Common Cathode  
Schottky-Barrier-Gleichrichter – Gemeinsame Kathode  
Version 2007-01-17  
10±0.2  
Nominal Current  
Nennstrom  
10 A  
20...100 V  
TO-220AB  
2.2g  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
4
2
3.8  
4
Type  
Typ  
Plastic case  
Kunststoffgehäuse  
1 2 3  
Weight approx.  
Gewicht ca.  
1
3
1.5  
0.9  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
2.54  
Standard packaging in tubes  
Standard Lieferform in Stangen  
Dimensions - Maße [mm]  
Maximum ratings and Characteristics  
Grenz- und Kennwerte  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung Stoßspitzensperrspannung  
Surge peak reverse voltage  
Forward Voltage  
Durchlass-Spannung  
VF [V] 1) 2)  
V
RRM [V]  
VRSM [V]  
IF = 5 A  
< 0.55  
< 0.55  
< 0.55  
< 0.55  
< 0.70  
< 0.70  
< 0.85  
< 0.85  
IF = 10 A  
< 0.63  
< 0.63  
< 0.63  
< 0.63  
< 0.79  
< 0.79  
< 0.92  
< 0.92  
SBCT1020  
SBCT1030  
SBCT1040  
SBCT1045  
SBCT1050  
SBCT1060  
SBCT1090  
SBCT10100  
20  
30  
20  
30  
40  
40  
45  
45  
50  
50  
60  
60  
90  
90  
100  
100  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TC = 100°C  
f > 15 Hz  
IFAV  
IFAV  
5 A 2)  
10 A 3)  
Repetitive peak forward current  
Periodischer Spitzenstrom  
IFRM  
20 A 2)  
100/120 A 2)  
100/120 A 2)  
50 A2s 2)  
Peak forward surge current, 50/60 Hz half sine-wave SBCT1020... TA = 25°C  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle SBCT1060  
IFSM  
IFSM  
i2t  
Peak forward surge current, 50/60 Hz half sine-wave SBCT1080... TA = 25°C  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
SBCT10100  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
TA = 25°C  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+150°C  
-50...+175°C  
1
Tj = 25°C  
2
3
Per diode Pro Diode  
Per device (parallel operation) Pro Bauteil (Parallelbetrieb)  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1

SBCT1045 替代型号

型号 品牌 替代类型 描述 数据表
MBR1045CT DIODES

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