Datasheet > SAV-541-DP+

SAV-541-DP+

更新时间： 2024-02-21 12:08:06

品牌	Logo	应用领域
MINI		/
页数	文件大小	规格书
5页	314K
描述
RF Small Signal Field-Effect Transistor

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技术参数
数据手册

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SAV-541-DP+ 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

SAV-541-DP+ 数据手册

Ultra Low Noise, Medium Current

E-PHEMT Transistor Die

SAV-541-D+

50Ω

0.45 to 6 GHz

Product Features

• Low Noise Figure, 0.4 dB

• Gain, 17 dB at 2 GHz

• High Output IP3, +33 dBm

• Output Power at 1dB comp., +21 dBm

• High Current, 15 to 60mA

• Wide bandwidth

• External biasing and matching required

+RoHS Compliant

The +Suffix identifies RoHS Compliance. See our web site

for RoHS Compliance methodologies and qualifications

Typical Applications

• Cellular

Ordering Information: Refer to Last Page

• ISM

• GSM

• WCDMA

• WiMax

• WLAN

• UNII and HIPERLAN

General Description

SAV-541-D+ is an ultra-low noise, high IP3 transistor die, manufactured using E-PHEMT* technology

enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly

below 2.5 GHz, and when combining this noise ﬁgure with high IP3 performance in a single device it

makes it an ideal ampliﬁer for demanding base station applications.

Simpliﬁed Schematic and Pad description

DRAIN

GATE

SOURCE

Pad

Source

Gate

Description

Ground

RF-IN

Drain

RF-OUT

* Enhancement mode Pseudomorphic High Electron Mobility Transistor.

REV. OR

M155842

SAV-541-D+

RS/CP

160407

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