Datasheet > S8550C

S8550C

更新时间： 2024-02-07 19:13:00

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
2页	418K
描述
500mA, 25V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3

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S8550C 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.82

S8550C 数据手册

M C C

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20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

S8550

Micro Commercial Components

Features

•

TO-92 Plastic-Encapsulate Transistors

Capable of 0.625Watts(Tamb=25^OC) of Power Dissipation.

PNP Silicon

Transistors

Collector-current 0.5A

Collector-base Voltage 40V

Operating and storage junction temperature range: -55^OC to +150^OC

Marking: S8550

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

TO-92

Electrical Characteristics @ 25^OC Unless^EOtherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

Collector-Base Breakdown Voltage

5.0

---

Vdc

(I =100uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I =0.1mAdc, I_B=0)

Emitter-Base Breakdown Voltage

---

Vdc

(I =100uAdc, I_C=0)

Collector Cutoff Current

0.1

0.2

0.1

uAdc

CBO

(V_CB=40Vdc, I =0)

Collector Cutoff Current

CEO

(V_CE=20Vdc, I =0)

I_EBO

Emitter Cutoff Current

(V_EB=3.0Vdc, I =0)

ON CHARACTERISTICS

h_FE(1)

DC Current Gain

---

300

---

(I =50mAdc, V_CE=1.0Vdc)

h_FE(2)

DC Current Gain

(I =500mAdc, V_CE=1.0Vdc)

V_CE(sat)

V_BE(sat)

V_EB

Collector-Emitter Saturation Voltage

0.6

1.2

1.4

Vdc

(I =500mAdc, I_B=50mAdc)

Base-Emitter Saturation Voltage

(I =500mAdc, I_B=50mAdc)

DIMENSIONS

Base- Emitter Voltage

(I_E=100mAdc)

INCHES

MIN

.170

.550

.010

.130

.010

DIM

MAX

.190

.590

.020

.160

.104

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

SMALL-SIGNAL CHARACTERISTICS

f_T

Transistor Frequency

150

---

MHz

(I =20mAdc, V_CE=6.0Vdc, f=30MHz)

FE (1)

CLASSIFICATION OF H

Rank

80-150

Range

120-200

160-300

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Revision: 4

2006/05/15

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