Datasheet > S8330MG

S8330MG

更新时间： 2022-04-21 14:51:20

品牌	Logo	应用领域
ROITHNER		二极管激光二极管
页数	文件大小	规格书
5页	388K
描述
Infrared Laser Diode

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S8330MG 数据手册

S8330MG

TECHNICAL DATA

Infrared Laser Diode

Features

•

Lasing Mode Structure: multi mode

Peak Wavelength : typ. 830 nm

Optical Ouput Power: 30 mW

Package: 5.6 mm

Electrical Connection

Pin Configuration

Bottom View

n-type

Function

LD Cathode

LD Anode, PD Cathode

PD Anode

Absolute Maximum Ratings (T_C=25°C)

Item

Symbol

Value

Unit

CW Output Power

LD Reverse Voltage

PD Reverse Voltage

Operating Case Temperature

Storage Temperature

P_O

V_rLD

V_rPD

T_C

°C

-10 … +40

-10 … +85

T_stg

Specifications (T_C=25°C, P_O=30mW)

Item

Optical Specifications

Center Wavelength

Symbol

Min.

Typ.

Max.

Unit

λ_C

θ_║

θ_┴

820

830

840

deg

FWHM Beam Divergence*

Electrical Specifications

Threshold Current

Operating Current

Slope Efficiency

Operating Voltage

Monitor Current

I_th

I_op

U_op

I_m

0.7

1.7

0.3

2.3

mW/mA

0.3

* θ_║and θ_┴are defined as the angle within the intensity is 50% of the peak value.

The above specifications are for reference purpose only and subjected to change without prior notice.

04.10.2011

S8330MG

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