Datasheet > S808200MNP

S808200MNP

更新时间： 2022-04-21 14:47:36

品牌	Logo	应用领域
ROITHNER		二极管激光二极管
页数	文件大小	规格书
5页	330K
描述
Infrared Laser Diode

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S808200MNP 数据手册

S808200MNP

TECHNICAL DATA

Infrared Laser Diode

Features

•

Lasing Mode Structure: multi mode

Peak Wavelength : typ. 808 nm

Optical Ouput Power: 200 mW

Package: 5.6 mm

Electrical Connection

Pin Configuration

Bottom View

Function

LD Cathode

LD Anode

Absolute Maximum Ratings (T_C=20°C)

Item

Symbol

Value

200

Unit

CW Output Power

P_O

V_r

LD Reverse Voltage

PD Reverse Voltage

Operating Case Temperature

Storage Temperature

V_rPD

T_C

T_stg

°C

-10 … +40

-10 … +85

Specifications (T_C=20°C)

Item

Optical Specifications

CW Output Power

Symbol

Min.

Typ.

Max.

Unit

P_O

λ_C

θ_║

θ_┴

200

808

deg

Center Wavelength

805

811

FWHM Beam Divergence

Electrical Specifications

Threshold Current

Operating Current

Slope Efficiency

I_th

I_op

260

280

mW/mA

0.8

Operating Voltage

U_op

1.9

1.95

The above specifications are for reference purpose only and subjected to change without prior notice.

06.09.2011

S808200MNP

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