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S7879

更新时间: 2024-02-27 09:26:45
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
16页 1288K
描述
POSITION SENSITIVE DETECTOR

S7879 技术参数

生命周期:Obsolete包装说明:MINIATURE, PLASTIC PACKAGE-4
Reach Compliance Code:unknownHTS代码:8541.40.60.50
风险等级:5.84其他特性:HIGH RELIABILITY
配置:COMMON CATHODE, 2 ELEMENTS最大暗电源:1 nA
红外线范围:YES功能数量:1
最高工作温度:85 °C最低工作温度:-25 °C
峰值波长:960 nm最小反向击穿电压:20 V
形状:RECTANGULARBase Number Matches:1

S7879 数据手册

 浏览型号S7879的Datasheet PDF文件第5页浏览型号S7879的Datasheet PDF文件第6页浏览型号S7879的Datasheet PDF文件第7页浏览型号S7879的Datasheet PDF文件第9页浏览型号S7879的Datasheet PDF文件第10页浏览型号S7879的Datasheet PDF文件第11页 
Characteristic and use  
By finding the difference or ratio of Ix1 to Ix2, the light input  
1. Basic principle  
position can be obtained by the formulas (1-3), (1-4), (1-7)  
and (1-8) irrespective of the incident light intensity level  
and its changes. The light input position obtained here cor-  
responds to the center-of-gravity of the light beam.  
A PSD basically consists of a uniform resistive layer  
formed on one or both surfaces of a high-resistivity semi-  
conductor substrate, and a pair of electrodes formed on  
both ends of the resistive layer for extracting position  
signals. The active area, which is also a resistive layer,  
has a PN junction that generates photocurrent by means  
of the photovoltaic effect.  
2. One-dimensional PSD  
Figure 2-1 Structure chart, equivalent circuit (one-dimensional PSD)  
Figure 1-1 PSD sectional view  
Rp  
ANODE (X1)  
X
B
X
A
OUTPUT IX1  
OUTPUT IX2  
P
D
C
j
Rsh  
INCIDENT  
LIGHT  
ANODE (X  
CATHODE  
(COMMON)  
2)  
ELECTRODE X  
2
PHOTOCURRENT  
ELECTRODE X  
1
P LAYER  
I LAYER  
P
D
C
: CURRENT GENERATOR  
: IDEAL DIODE  
: JUNCTION CAPACITANCE  
N LAYER  
j
Rsh: SHUNT RESISTANCE  
Rp : POSITIONING RESISTANCE  
COMMON  
ELECTRODE  
KPSDC0006EA  
RESISTANCE LENGTH L  
X
Figure 2-2 Active area chart (one-dimensional PSD)  
KPSDC0005EA  
LX  
Figure 1-1 shows a sectional view of a PSD using a simple  
illustration to explain the operating principle. The PSD has  
a P-type resistive layer formed on an N-type high-resistive  
silicon substrate. This P-layer serves as an active area for  
photoelectric conversion and a pair of output electrodes  
are formed on the both ends of the P-layer. On the  
backside of the silicon substrate is an N-layer to which a  
common electrode is connected. Basically, this is the  
same structure as that of PIN photodiodes except for the  
P-type resistive layer on the surface.  
X
1
X2  
x
ACTIVE AREA  
KPSDC0010EA  
Position conversion formula (See Figure 2-2.)  
2x  
I
I
X2 - IX1  
=
........ (2-1)  
When a spot light strikes the PSD, an electric charge  
proportional to the light intensity is generated at the  
incident position. This electric charge is driven through the  
X1 + IX2  
LX  
In the above formula, IX1 and IX2 are the output currents  
obtained from the electrodes shown in Figure 2-2.  
resistive layer and collected by the output electrodes X  
1
and X as photocurrents, while being divided in inverse  
2
proportion to the distance between the incident position  
and each electrode.  
The relation between the incident light position and the  
3. Two-dimensional PSD  
Two-dimensional PSDs are grouped by structure into duo-  
lateral and tetra-lateral types. Among the tetra-lateral type  
PSDs, a pin-cushion type with an improved active area  
and electrodes is also provided. (See 3-3.) The position  
conversion formulas slightly differ according to the PSD  
structure. Two-dimensional PSDs have two pairs of output  
photocurrents from the output electrodes X  
the following formulas.  
1, X2 is given by  
When the center point of PSD is set at the origin:  
L
2
X
LX  
2
L
- X  
A
+ XA  
......... (1-1)  
...... (1-2)  
× Io  
IX1  
=
× Io  
IX2  
=
electrodes, X1, X2 and Y1, Y2.  
L
X
X
I
X2 - IX1  
2X  
A
I
X1  
LX - 2X  
A .............. (1-4)  
3-1 Duo-lateral type PSD  
=
............ (1-3)  
=
I
X1 + IX2  
LX  
IX2  
LX  
+ 2X  
When the end of PSD is set at the origin:  
- X  
A
On the duo-lateral type, the N-layer shown in the sectional  
view of Figure 1-1 is processed to form a resistive layer,  
and two pair of electrodes are formed on both surfaces as  
X and Y electrodes arranged at right angles. (See Figure  
3-1.) The X position signals are extracted from the X elec-  
trodes on the upper surface, while the Y position signals  
are extracted from the Y electrodes on the bottom surface.  
As shown in Figure 3-1, a photocurrent with a polarity op-  
posite that of the other surface is on each surface, to pro-  
duce signal currents twice as large as the tetra-lateral type  
and achieve a higher position resolution. In addition, when  
compared to the tetra-lateral type, the duo-lateral type of-  
fers excellent position detection characteristics because  
the electrodes are not in close proximity. The light input  
position can be calculated from conversion formulas (3-1)  
and (3-2).  
L
X
B
XB  
.
.
Io ................. (1-6)  
IX1  
=
Io ............. (1-5)  
IX2  
=
L
X
LX  
IX2 - IX1  
2XB  
I
I
X1  
L
X
- X  
B ................ (1-8)  
=
X ...... (1-7)  
- L  
=
IX1 + IX2  
L
X
X2  
XB  
Io : Total photocurrent (IX1 + IX2  
)
IX1: Output current from electrode X  
1
IX2: Output current from electrode X  
2
LX: Resistance length (length of the active area)  
XA: Distance from the electrical center of PSD to the light input position  
XB: Distance from the electrode X1 to the light input position  
5

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