Characteristic and use
Figure 3-1 Structure chart, equivalent circuit (duo-lateral type PSD)
Figure 3-4 Active area chart (tetra-lateral type PSD)
LX
CATHODE (Y2)
Rp
ANODE (X1)
Y2
P
D
C Rsh
j
ANODE (X2)
y
Rp
X1
X2
CATHODE (Y1)
x
P
D
C
: CURRENT GENERATOR
: IDEAL DIODE
: JUNCTION CAPACITANCE
j
Rsh: SHUNT RESISTANCE
Rp : POSITIONING RESISTANCE
ACTIVE AREA
Y1
KPSDC0007EA
KPSDC0011EA
Position conversion formula (See Figure 3-4.)
Figure 3-2 Active area chart (duo-lateral type PSD)
L
X
IX2 - IX1
2x
=
=
........ (3-3)
........ (3-4)
I
X1 + IX2
Y2 - IY1
Y1 + IY2
LX
Y
2
I
I
2y
LY
y
X
1
X2
3-3 Pin-cushion type (improved tetra-lateral type) PSD
x
This is a variant of the tetra-lateral type PSD with an im-
proved active area and reduced interaction between elec-
trodes. In addition to the advantages of small dark current,
high-speed response and easy application of reverse bias
that the tetra-lateral type offers, the circumference distor-
tion has been greatly reduced. The light input position of
the pin-cushion type shown in Figure 3-6 is calculated from
conversion formulas (3-5) and (3-6), which are different
from those for the duo-lateral and tetra-lateral types.
ACTIVE AREA
Y
1
KPSDC0011EA
Position conversion formula (See Figure 3-2.)
I
X2 - IX1
2x
LX
=
=
........ (3-1)
........ (3-2)
I
X1 + IX2
Y2 - IY1
Y1 + IY2
Figure 3-5 Structure chart, equivalent circuit (pin-cushion type PSD)
I
2y
LY
ANODE (Y2)
ANODE (X1)
I
Rp
ANODE (X2)
3-2 Tetra-lateral type PSD
ANODE (Y1)
Rsh
D
P
CATHODE
C
j
The tetra-lateral type has four electrodes on the upper
surface, formed along each of the four edges. Photocur-
rent is divided into 4 parts through the same resistive
layer and extracted as position signals from the four
electrodes. Compared to the duo-lateral type, interaction
between the electrodes tends to occur near the corners
of the active area, making position distortion larger. But
the tetra-lateral type features an easy-to-apply reverse
bias voltage, small dark current and high-speed re-
sponse. The light input position for the tetra-lateral type
shown in Figure 3-4 is given by conversion formulas (3-
3) and (3-4), which are the same as for the duo-lateral
type.
P
D
C
Rsh
Rp
: CURRENT GENERATOR
: IDEAL DIODE
: JUNCTION CAPACITANCE
: SHUNT RESISTANCE
: POSITIONING RESISTANCE
j
KPSDC0009EA
Figure 3-6 Active area chart (pin-cushion type PSD)
L
X
Y
2
Figure 3-3 Structure chart, equivalent circuit (tetra-lateral type PSD)
y
X1
X2
x
Rp
ANODE (Y2)
ANODE (X
1)
ACTIVE AREA *
Y1
P
D
Rsh
C
j
ANODE (X
2)
ANODE (Y
1)
* Active area is specified at the inscribed square.
CATHODE
KPSDC0012EA
Position conversion formula (See Figure 3-6.)
P
D
C
: CURRENT GENERATOR
: IDEAL DIODE
: JUNCTION CAPACITANCE
(IX2 + IY1) - (IX1 + IY2
)
2x
=
=
........ (3-5)
........ (3-6)
j
I
X1 + IX2 + IY1 + IY2
(IX2 + IY2) - (IX1 + IY1
X1 + IX2 + IY1 + IY2
LX
Rsh: SHUNT RESISTANCE
Rp : POSITIONING RESISTANCE
)
2y
LY
KPSDC0008EA
I
6