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S71WS128NB0BFWAH3 PDF预览

S71WS128NB0BFWAH3

更新时间: 2024-01-05 19:03:06
品牌 Logo 应用领域
飞索 - SPANSION 静态存储器内存集成电路
页数 文件大小 规格书
13页 332K
描述
Memory Circuit, Flash+PSRAM, 8MX16, CMOS, PBGA84, 8 X 11.60 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84

S71WS128NB0BFWAH3 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.65
最长访问时间:80 nsJESD-30 代码:R-PBGA-B84
内存集成电路类型:MEMORY CIRCUIT混合内存类型:FLASH+PSRAM
端子数量:84最高工作温度:85 °C
最低工作温度:-25 °C封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA84,10X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
电源:1.8 V认证状态:Not Qualified
最大待机电流:0.00007 A子类别:Other Memory ICs
最大压摆率:0.066 mA标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
Base Number Matches:1

S71WS128NB0BFWAH3 数据手册

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D a t a S h e e t ( A d v a n c e I n f o r m a t i o n )  
4. MCP Block Diagram  
F-VCC  
Flash-only Address  
Shared Address  
V
V
ID  
CC  
DQ15 to DQ0  
CLK  
WP#  
22  
16  
DQ15 to DQ0  
CLK  
WP#  
ACC  
ACC  
CE#  
OE#  
WE#  
RESET#  
AVD#  
Flash 1  
(Note 2)  
F1-CE#  
(Note 4)  
Flash 2  
OE#  
WE#  
F-RST#  
AVD#  
RDY  
RDY  
VSS  
(Note 2)  
F2-CE#  
R-VCC  
22  
VCCQ  
VCC  
16  
I/O15 to I/O0  
CLK  
R-CE1#  
CE#  
WE#  
OE#  
pSRAM  
WAIT#  
R-UB#  
R-LB#  
R-CE2  
UB#  
LB#  
V
SSQ  
AVD#  
CRE#  
(Note 1)  
R-CRE  
Notes:  
1. R-CRE is only present in CellularRAM-compatible pSRAM.  
2. For 1 Flash + pSRAM, F1-CE# = CE#. For 2 Flash + pSRAM, CE# = F1-CE# and F2-CE# is the chip-enable pin for the second Flash.  
3. Only needed for S71WS512N.  
4. For the 128M pSRAM devices, there are 23 shared addresses.  
5. Connection Diagrams/Physical Dimensions  
This section contains the I/O designations and package specifications for the S71WS-N.  
5.1  
Special Handling Instructions for FBGA Packages  
Special handling is required for Flash Memory products in FBGA packages.  
Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The  
package and/or data integrity may be compromised if the package body is exposed to temperatures above  
150°C for prolonged periods of time.  
July 19, 2006 S71WS-N_00_A6  
S71WS-N  
5

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