Datasheet > S6505MG

S6505MG

更新时间： 2022-04-21 14:47:24

品牌	Logo	应用领域
ROITHNER		二极管激光二极管
页数	文件大小	规格书
5页	369K
描述
Infrared Laser Diode

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S6505MG 数据手册

S6505MG

TECHNICAL DATA

Infrared Laser Diode

Features

•

Lasing Mode Structure: single mode

Peak Wavelength : typ. 650 nm

Optical Ouput Power: 5 mW

Package: 5.6 mm

Electrical Connection

Pin Configuration

Bottom View

n-type

Function

LD Cathode

LD Anode, PD Cathode

PD Anode

Absolute Maximum Ratings (T_C=20°C)

Item

Symbol

Value

Unit

CW Output Power

LD Reverse Voltage

P_O

V_r

PD Reverse Voltage

Operating Case Temperature

Storage Temperature

V_rPD

T_C

T_stg

°C

-10 … +50

-15 … +85

Specifications (T_C=20°C)

Item

Optical Specifications

CW Output Power

Symbol

Min.

Typ.

Max.

Unit

P_O

λ_C

θ_║

θ_┴

640

655

deg

Center Wavelength

660

FWHM Beam Divergence

Electrical Specifications

Threshold Current

Operating Current

Slope Efficiency

Operating Voltage

Monitor Current

I_th

I_op

U_op

I_m

0.65

2.1

0.3

2.5

0.5

mW/mA

0.4

0.05

The above specifications are for reference purpose only and subjected to change without prior notice.

23.09.2010

S6505MG

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