Datasheet > S5K-M3/57T

S5K-M3/57T

更新时间： 2022-09-29 19:34:21

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	86K
描述
DIODE GPP 5A 800V DO-214AB

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数据手册

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S5K-M3/57T 数据手册

S5A-M3, S5B-M3, S5D-M3, S5G-M3, S5J-M3, S5K-M3, S5M-M3

www.vishay.com

Vishay General Semiconductor

100

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

T_J= 150 °C

T_J= 25 °C

T_J= 125 °C

0.1

0.01

T_J= -40 °C

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.1

100

Reverse Voltage (V)

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 5 - Typical Junction Capacitance



1000

T_J= 150 °C

100

T_J= 125 °C

T_J= 25 °C

0.1

0.01

0.001

T_J= -40 °C

100

Percent of Rated Peak Reverse Voltage (%)

Fig. 4 - Typical Reverse Characteristics

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

SMC (DO-214AB)

Cathode Band

Mounting Pad Layout

0.185 (4.69) MAX.

0.245 (6.22)

0.220 (5.59)

0.126 (3.20)

0.114 (2.90)

0.126 (3.20) MIN.

0.060 (1.52) MIN.

0.280 (7.11)

0.260 (6.60)

0.012 (0.305)

0.006 (0.152)

0.320 (8.13) REF.

0.103 (2.62)

0.079 (2.01)

0.060 (1.52)

0.030 (0.76)

0.008 (0.2)

0 (0)

0.320 (8.13)

0.305 (7.75)

Revision: 31-Jul-2018

Document Number: 89921

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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