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S3KB-T1 PDF预览

S3KB-T1

更新时间: 2024-09-26 08:27:47
品牌 Logo 应用领域
WTE 二极管
页数 文件大小 规格书
3页 40K
描述
Rectifier Diode, 1 Element, 3A, 800V V(RRM),

S3KB-T1 数据手册

 浏览型号S3KB-T1的Datasheet PDF文件第2页浏览型号S3KB-T1的Datasheet PDF文件第3页 
WTE  
POWER SEMICONDUCTORS  
S3AB – S3MB  
3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER  
Features  
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Glass Passivated Die Construction  
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Ideally Suited for Automatic Assembly  
Low Forward Voltage Drop  
Surge Overload Rating to 100A Peak  
Low Power Loss  
Built-in Strain Relief  
Plastic Case Material has UL Flammability  
Classification Rating 94V-O  
B
D
A
F
C
H
G
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ E  
SMB/DO-214AA  
Mechanical Data  
Dim  
A
Min  
3.30  
4.06  
1.91  
0.152  
5.08  
2.13  
0.051  
0.76  
Max  
3.94  
4.70  
2.11  
!
!
Case: Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
B
C
!
!
!
D
0.305  
5.59  
2.44  
0.203  
1.27  
E
Weight: 0.093 grams (approx.)  
F
G
H
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
S3AB S3BB  
S3DB S3GB  
S3JB  
S3KB S3MB Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
3.0  
V
A
Average Rectified Output Current @TL = 75°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
100  
A
Forward Voltage  
@IF = 3.0A  
VFM  
IRM  
1.20  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 125°C  
5.0  
250  
µA  
Reverse Recovery Time (Note 1)  
trr  
Cj  
2.5  
60  
µS  
pF  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Operating and Storage Temperature Range  
RJL  
Tj, TSTG  
13  
K/W  
°C  
-65 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
3. Mounted on P.C. Board with 8.0mm2 land area.  
S3AB – S3MB  
1 of 3  
© 2003 Won-Top Electronics  

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