WTE
POWER SEMICONDUCTORS
S3AB – S3MB
3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Features
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Glass Passivated Die Construction
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Ideally Suited for Automatic Assembly
Low Forward Voltage Drop
Surge Overload Rating to 100A Peak
Low Power Loss
Built-in Strain Relief
Plastic Case Material has UL Flammability
Classification Rating 94V-O
B
D
A
F
C
H
G
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ E
SMB/DO-214AA
Mechanical Data
Dim
A
Min
3.30
4.06
1.91
0.152
5.08
2.13
0.051
0.76
Max
3.94
4.70
2.11
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Case: Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
B
C
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D
0.305
5.59
2.44
0.203
1.27
E
Weight: 0.093 grams (approx.)
F
G
H
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Symbol
S3AB S3BB
S3DB S3GB
S3JB
S3KB S3MB Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
RMS Reverse Voltage
VR(RMS)
IO
280
3.0
V
A
Average Rectified Output Current @TL = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
100
A
Forward Voltage
@IF = 3.0A
VFM
IRM
1.20
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 125°C
5.0
250
µA
Reverse Recovery Time (Note 1)
trr
Cj
2.5
60
µS
pF
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
RꢀJL
Tj, TSTG
13
K/W
°C
-65 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
S3AB – S3MB
1 of 3
© 2003 Won-Top Electronics