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S29GL512T10FHI010 PDF预览

S29GL512T10FHI010

更新时间: 2024-09-25 15:50:19
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 内存集成电路
页数 文件大小 规格书
105页 1646K
描述
Flash, 32MX16, 100ns, PBGA64, FBGA-64

S29GL512T10FHI010 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:LBGA,Reach Compliance Code:compliant
HTS代码:8542.32.00.51风险等级:1.58
最长访问时间:100 ns备用内存宽度:8
JESD-30 代码:R-PBGA-B64JESD-609代码:e1
长度:13 mm内存密度:536870912 bit
内存集成电路类型:FLASH内存宽度:16
湿度敏感等级:3功能数量:1
端子数量:64字数:33554432 words
字数代码:32000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32MX16封装主体材料:PLASTIC/EPOXY
封装代码:LBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260编程电压:2.7 V
座面最大高度:1.4 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
宽度:11 mmBase Number Matches:1

S29GL512T10FHI010 数据手册

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S29GL01GT/S29GL512T  
1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte)  
GL-T MirrorBit® Eclipse™ Flash  
General Description  
The Cypress® S29GL01GT/512T are MirrorBit® Eclipse™ flash products fabricated on 45 nm process technology. These devices  
offer a fast page access time as fast as 15 ns, with a corresponding random access time as fast as 100 ns. They feature a Write  
Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming  
time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher  
density, better performance, and lower power consumption.  
Distinctive Characteristics  
45 nm MirrorBit Eclipse Technology  
Advanced Sector Protection (ASP)  
– Volatile and non-volatile protection methods for each  
sector  
Single supply (VCC) for read / program / erase (2.7 V to  
3.6 V)  
Separate 2048-byte One Time Program (OTP) array  
– Four lockable regions (SSR0 - SSR3)  
– SSR0 is Factory Locked  
Versatile I/O feature  
– Wide I/O voltage range (VIO): 1.65 V to VCC  
x8/x16 data bus  
– SSR3 is Password Read Protect  
Common Flash Interface (CFI) parameter table  
Temperature Range / Grade:  
Asynchronous 32-byte Page read  
512-byte Programming Buffer  
– Programming in Page multiples, up to a maximum of 512  
bytes  
– Industrial (40 °C to +85 °C)  
– Industrial Plus (40 °C to +105 °C)  
– Extended (40 °C to +125 °C)  
Single word and multiple program on same word options  
Automatic Error Checking and Correction (ECC) — internal  
– Automotive, AEC-Q100 Grade 3 (–40 °C to +85 °C)  
– Automotive, AEC-Q100 Grade 2 (–40 °C to +105 °C)  
100,000 Program / Erase Cycles  
20-year data retention  
hardware ECC with single bit error correction  
Sector Erase  
– Uniform 128-kbyte sectors  
Suspend and Resume commands for Program and Erase  
operations  
Packaging Options  
– 56-pin TSOP  
Status Register, Data Polling, and Ready/Busy pin methods  
to determine device status  
– 64-ball LAA Fortified BGA, 13 mm 11 mm  
– 64-ball LAE Fortified BGA, 9 mm 9 mm  
– 56-ball VBU Fortified BGA, 9 mm 7 mm  
Cypress Semiconductor Corporation  
Document Number: 002-00247 Rev. *I  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised May 24, 2017  

S29GL512T10FHI010 替代型号

型号 品牌 替代类型 描述 数据表
S29GL512P11FFI010 CYPRESS

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