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S29GL512T10GHIyyx

更新时间： 2024-09-26 00:23:27
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
105页 10041K
描述
1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte)

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S29GL512T10GHIyyx 数据手册

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S29GL01GT, S29GL512T  
1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte)  
GL-T MirrorBit® Eclipse™ Flash  
General Description  
The Cypress® S29GL01GT/512T are MirrorBit® Eclipse™ flash products fabricated on 45 nm process technology. These devices  
offer a fast page access time as fast as 15 ns, with a corresponding random access time as fast as 100 ns. They feature a Write  
Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming  
time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher  
density, better performance, and lower power consumption.  
Distinctive Characteristics  
45 nm MirrorBit Eclipse Technology  
Advanced Sector Protection (ASP)  
– Volatile and non-volatile protection methods for each  
sector  
Single supply (VCC) for read / program / erase (2.7 V to  
3.6 V)  
Separate 2048-byte One Time Program (OTP) array  
– Four lockable regions (SSR0 - SSR3)  
– SSR0 is Factory Locked  
Versatile I/O feature  
– Wide I/O voltage range (VIO): 1.65 V to VCC  
x8/x16 data bus  
– SSR3 is Password Read Protect  
Common Flash Interface (CFI) parameter table  
Temperature Range / Grade:  
Asynchronous 32-byte Page read  
512-byte Programming Buffer  
– Programming in Page multiples, up to a maximum of 512  
bytes  
– Industrial (40 °C to +85 °C)  
– Industrial Plus (40 °C to +105 °C)  
– Extended (40 °C to +125 °C)  
Single word and multiple program on same word options  
Automatic Error Checking and Correction (ECC) — internal  
– Automotive, AEC-Q100 Grade 3 (–40 °C to +85 °C)  
– Automotive, AEC-Q100 Grade 2 (–40 °C to +105 °C)  
100,000 Program / Erase Cycles  
20-year data retention  
hardware ECC with single bit error correction  
Sector Erase  
– Uniform 128-kbyte sectors  
Suspend and Resume commands for Program and Erase  
operations  
Packaging Options  
– 56-pin TSOP  
Status Register, Data Polling, and Ready/Busy pin methods  
to determine device status  
– 64-ball LAA Fortified BGA, 13 mm 11 mm  
– 64-ball LAE Fortified BGA, 9 mm 9 mm  
– 56-ball VBU Fortified BGA, 9 mm 7 mm  
Cypress Semiconductor Corporation  
Document Number: 002-00247 Rev. *G  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised October 27, 2016  
1234567...105

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与S29GL512T10GHIyyx相关器件

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S29GL512T10TFA023 INFINEON

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S29GL512T10TFAyyx CYPRESS

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 		1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte)
S29GL512T10TFI010 CYPRESS

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S29GL512T10TFI010 INFINEON

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S29GL512T10TFI013 INFINEON

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 		High Performance Page Mode
S29GL512T10TFI020 CYPRESS

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 		Flash, 32MX16, 100ns, PDSO56, TSOP-56
S29GL512T10TFI020 INFINEON

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 		High Performance Page Mode
S29GL512T10TFI023 INFINEON

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 		High Performance Page Mode

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