S29GL-M MirrorBitTM Flash Family
S29GL256M, S29GL128M, S29GL064M, S29GL032M
256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
0.23 µm MirrorBit Process Technology
Data Sheet
This product family has been retired and is not recommended for designs. For new and current designs, S29GL032A,
S29GL064A, S29GL128P, and S29GL256P supersede S29GL032M, S29GL064M, S29GL128M, and S29GL256M respectively.
These are the factory-recommended migration paths. Please refer to the S29GL-A and S29GL-P Datasheets for specifications
and ordering information. Availability of this document is retained for reference and historical purposes only.
Distinctive Characteristics
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16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Architectural Advantages
Single power supply operation
3 volt read, erase, and program operations
Low power consumption (typical values at 3.0 V,
5 MHz)
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Manufactured on 0.23 µm MirrorBit process
technology
18 mA typical active read current (64 Mb, 32 Mb)
25 mA typical active read current (256 Mb, 128 Mb)
50 mA typical erase/program current
Secured Silicon Sector region
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128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
1 µA typical standby mode current
Package options
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40-pin TSOP
48-pin TSOP
56-pin TSOP
64-ball Fortified BGA
48-ball fine-pitch BGA
63-ball fine-pitch BGA
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May be programmed and locked at the factory or by
the customer
Flexible sector architecture
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256 Mb: 512 32-Kword (64 Kbyte) sectors
128 Mb: 256 32-Kword (64 Kbyte) sectors
Software & Hardware Features
64 Mb (uniform sector models): 128 32-Kword
(64-Kbyte) sectors or 128 32 Kword sectors
Software features
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Program Suspend & Resume: read other sectors
before programming operation is completed
Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
Data# polling & toggle bits provide status
CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
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64 Mb (boot sector models): 127 32-Kword
(64-Kbyte) sectors + 8 4Kword (8Kbyte) boot sectors
32 Mb (uniform sector models): 64 32-Kword
(64-Kbyte) sectors of 64 32-Kword sectors
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32 Mb (boot sector models): 63 32-Kword (64 Kbyte)
sectors + 8 4-Kword (8-Kbyte) boot sectors
Compatibility with JEDEC standards
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Provides pinout and software compatibility for single-
power supply flash, and superior inadvertent write
protection
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Unlock Bypass Program command reduces overall
multiple-word programming time
Hardware features
100,000 erase cycles typical per sector
20-year data retention typical
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Sector Group Protection: hardware-level method of
preventing write operations within a sector group
Temporary Sector Unprotect: VID-level method of
charging code in locked sectors
WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings on uniform
sector models
Performance Characteristics
High performance
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90 ns access time (128 Mb, 64 Mb, 32 Mb),
100 ns access time (256 Mb)
4-word/8-byte page read buffer
25 ns page read times (128 Mb, 64 Mb, 32 Mb)
30 ns page read times (256 Mb)
16-word/32-byte write buffer
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Hardware reset input (RESET#) resets device
Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
Publication Number S29GL-M_00 Revision B Amendment 8 Issue Date February 7, 2007
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