S29CD-J and S29CL-J Flash Family
S29CD032J, S29CD016J, S29CL032J, S29CL016J
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-Only
Simultaneous Read/Write, Dual Boot, Burst Mode
Flash Memory with VersatileI/O™
Data Sheet
General Description
The Spansion S29CD-J and S29CL-J devices are Floating Gate products fabricated in 110-nm process
technology. These burst-mode Flash devices are capable of performing simultaneous read and write
operations with zero latency on two separate banks, using separate data and address pins. These products
can operate up to 75 MHz (32 Mb) or 66 MHz (16 Mb), and use a single VCC of 2.5V to 2.75V (S29CD-J) or
3.0V to 3.6V (S29CL-J) that make them ideal for today’s demanding automotive applications.
Distinctive Characteristics
Single 2.6V (S29CD-J) or 3.3V (S29CL-J) for read/program/
Supports Common Flash Interface (CFI)
Extended Temperature range
erase
110 nm Floating Gate Technology
Simultaneous Read/Write operation with zero latency
x32 Data Bus
Persistent and Password methods of Advanced Sector
Protection
Unlock Bypass program command to reduce programming
time
Dual Boot Sector Configuration (top and bottom)
Flexible Sector Architecture
ACC input pin to reduce factory programming time
Data Polling bits indicate program and erase operation
– CD016J and CL016J: Eight 2k Double word, Thirty 16k Double
word, and Eight 2k Double Word sectors
completion
– CD032J and CL032J: Eight 2k Double word, Sixty-two 16k Double
Word, and Eight 2k Double Word sectors
Hardware (WP#) protection of two outermost sectors in the
large bank
VersatileI/O™ control (1.65V to 3.6V)
Ready/Busy (RY/BY#) output indicates data available to
Programmable Burst Interface
system
– Linear for 2, 4, and 8 double word burst with wrap around
Suspend and Resume commands for Program and Erase
Operation
Secured Silicon Sector that can be either factory or customer
locked
Offered Packages
20 year data retention (typical)
– 80-pin PQFP
– 80-ball Fortified BGA (13 x 11 mm and 11 x 9mm versions)
– Pb-free package option available
– Known Good Die
Cycling Endurance: 1 million write cycles per sector (typical)
Command set compatible with JEDEC (JC42.4) standard
Performance Characteristics
Read Access Times
Current Consumption (Max values)
75
Continuous Burst Read @ 75 MHz
90 mA
50 mA
50 mA
60 µA
Speed Option (MHz)
66
56
40
(32 Mb only)
Program
Max Asynch. Access Time, ns (t
)
54
8
54
8
54
8
54
8
ACC
Erase
Max Synch. Burst Access, ns (t
)
BACC
Standby Mode
Min Initial Clock Delay (clock cycles)
Max CE# Access Time, ns (t
5
5
5
4
)
54
20
54
20
54
20
54
20
CE
Typical Program and Erase Times
Max OE# Access time, ns (t
)
OE
Double Word Programming
Sector Erase
18 µs
1.0 s
Notice for the 32Mb S29CD-J and S29CL-J devices only:
Please refer to the application note “Recommended Mode of Operation for Spansion® 110 nm S29CD032J/S29CL032J Flash
Memory” publication number S29CD-CL032J_Recommend_AN for programming best practices.
Publication Number S29CD-J_CL-J_00
Revision B
Amendment 7
Issue Date October 11, 2012
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