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S29CD032G0RFAN010

更新时间： 2024-01-06 12:15:06
品牌 Logo 应用领域
飞索 - SPANSION /
页数 文件大小 规格书
93页 1616K
描述
CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY

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S29CD032G0RFAN010 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：BGA
包装说明：LBGA,针数：80
Reach Compliance Code：not_compliantECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.42
最长访问时间：48 ns其他特性：SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK
启动块：BOTTOMJESD-30 代码：R-PBGA-B80
JESD-609代码：e0长度：13 mm
内存密度：33554432 bit内存集成电路类型：FLASH
内存宽度：32湿度敏感等级：3
功能数量：1端子数量：80
字数：1048576 words字数代码：1000000
工作模式：ASYNCHRONOUS最高工作温度：125 °C
最低工作温度：-40 °C组织：1MX32
封装主体材料：PLASTIC/EPOXY封装代码：LBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, LOW PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：240
编程电压：2.7 V认证状态：Not Qualified
座面最大高度：1.4 mm最大供电电压 (Vsup)：2.75 V
最小供电电压 (Vsup)：2.5 V标称供电电压 (Vsup)：2.6 V
表面贴装：YES技术：CMOS
温度等级：AUTOMOTIVE端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：1 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：30
类型：NOR TYPE宽度：11 mm

S29CD032G0RFAN010 数据手册

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S29CD032G  
32 Megabit (1 M x 32-Bit)  
CMOS 2.5 Volt-only Burst Mode, Dual Boot,  
Simultaneous Read/Write Flash Memory  
ADVANCE  
INFORMATION  
Data Sheet  
Distinctive Characteristics  
„
Ultra low power consumption  
— Burst Mode Read: 90 mA @ 66 MHz max, capable of  
75 MHz (Fortified BGA only)  
— Program/Erase: 50 mA max  
— Standby mode: CMOS: 60 µA max  
Architecture Advantages  
„
Simultaneous Read/Write operations  
— Data can be read from one bank while executing  
erase/program functions in other bank  
(-40°C to 85°C only)  
— Zero latency between read and write operations  
— Two bank architecture: 75%/25%  
„
„
„
1 million write cycles per sector typical  
20 year data retention typical  
„
„
User-Defined x32 Data Bus  
VersatileI/O™ control  
Dual Boot Block  
— Top and bottom boot sectors in the same device  
— Device generates data output voltages and tolerates  
data input voltages as determined by the voltage on  
the VIO pin  
„
Flexible sector architecture  
— Eight 8 Kbytes, sixty-two 64 Kbytes, and eight 8  
Kbytes sectors  
— 1.65 V to 2.75 V compatible I/O signals  
Software Features  
„
„
Manufactured on 170 nm process technology  
SecSi (Secured Silicon) Sector (256 Bytes)  
„
Persistent Sector Protection  
— A command sector protection method to lock  
combinations of individual sectors and sector groups  
to prevent program or erase operations within that  
sector (requires only VCC levels)  
—
Factory locked and identifiable: 16 bytes for secure,  
random factory Electronic Serial Number; remainder  
may be customer data programmed by AMD  
Customer lockable: Can be read, programmed or  
erased just like other sectors. Once locked, data  
cannot be changed  
—
„
Password Sector Protection  
— A sophisticated sector protection method to lock  
combinations of individual sectors and sector groups  
to prevent program or erase operations within that  
sector using a user-definable 64-bit password  
„
„
Programmable Burst interface  
— Interface to any high performance processor  
— Modes of Burst Read Operation:  
„
„
Supports Common Flash Interface (CFI)  
—
Linear Burst: 4 double words and 8 double words  
Unlock Bypass Program Command  
— Reduces overall programming time when issuing  
multiple program command sequences  
with wrap around  
Program Operation  
— Ability to perform synchronous and asynchronous  
write operations of burst configuration register  
settings independently  
„
Data# Polling and toggle bits  
— Provides a software method of detecting program or  
erase operation completion  
„
„
Single power supply operation  
— Optimized for 2.5 to 2.75 volt read, erase, and  
program operations  
Hardware Features  
„
Program Suspend/Resume & Erase Suspend/  
Resume  
— Suspends program or erase operations to allow  
reading, programming, or erasing in same bank  
Compatibility with JEDEC standards (JC42.4)  
— Software compatible with single-power supply Flash  
— Backward-compatible with AMD Am29LV and Am29F  
flash memories  
„
„
Hardware Reset (RESET#), Ready/Busy# (RY/  
BY#), and Write Protect (WP#) inputs  
Performance Characteristics  
„
High performance read access  
— Initial/random access times as fast as 48 ns  
— Burst access time as fast as 7.5 ns for ball grid array  
package  
ACC input  
— Accelerates programming time for higher throughput  
during system production  
„
Package options  
— 80-pin PQFP  
— 80-ball Fortified BGA  
Publication Number 30606 Revision B Amendment 0 Issue Date March 22, 2004  
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under development by  
FASL LLC. FASL LLC reserves the right to change or discontinue work on any product without notice. The information in this document is provided “as is”  
without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of  
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