Datasheet > S2206

S2206

更新时间： 2022-02-26 14:03:01

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
13页	975K
描述
N-channel SiC power MOSFET bare die

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数据手册

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S2206 数据手册

S2206

N-channel SiC power MOSFET bare die

Data Sheet

V_DSS

R_DS(on)(Typ.)

I_D

650V

120mW

29A*¹

lFeatures

lInner circuit

(D)

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

(G) Gate

(D) Drain

(S) Source

(G)

*1 Body Diode

5) Simple to drive

(S)

lApplication

• Solar inverters

• DC/DC converters

• Switch mode power supplies

• Induction heating

• Motor drives

lAbsolute maximum ratings (T_a= 25°C)

Parameter

Symbol

V_DSS

Value

650

Unit

Drain - Source voltage

T_c= 25°C

Continuous drain current

I_D

Pulsed drain current

I_D,pulse

V_GSS

Gate - Source voltage (DC)

Gate - Source surge voltage (T_surge˂ 300nsec)

Junction temperature

-6 to 22

V_GSS-surge

-10 to 26

175

T_j

°C

T_stg

Range of storage temperature

-55 to +175

www.rohm.com

2016.02 - Rev.C

1/11

12 3 4 5 6 7...13

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