Datasheet > S1PHB75GK14B

S1PHB75GK14B

更新时间： 2022-02-26 10:45:43

品牌	Logo	应用领域
SIRECTIFIER		/
页数	文件大小	规格书
3页	259K
描述
Single Phase Half Controlled Bridge Modules

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中文翻译

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数据手册

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S1PHB75GK14B 数据手册

S1PHB75GKXXB

Single Phase Half Controlled Bridge Modules With Free Wheeling Diode

Symbol

Test Conditions

Characteristic Values

Unit

TVJ=TVJM; VR=VRRM; VD=VDRM

IR, ID

IT=118A; TVJ=25C

1.64

0.83

10.5

For power-loss calculations only

VTO

VD=6V;

TVJ=25^oC

TVJ=-40^oC

1.5

1.6

VGT

IGT

VD=6V;

TVJ=25^oC

100

200

TVJ=-40^oC

TVJ=TVJM;

VD=2/3VDRM

TVJ=25^oC

0.2

VGD

IGD

450

tp=10us; IG=0.45A;

diG/dt=0.45A/us

TVJ=25^oC; VD=6V; RGK=

TVJ=25^oC; VD=1/2VDRM

200

tgd

IG=0.45A; diG/dt=0.45A/us

TVJ=TVJM; IT=20A; tp=200us; VR=100V

VD=2/3VDRM; dv/dt=15V/us; di/dt=-10A/us

typ.

250

per thyristor/Diode; DC

per module

0.85

0.17

K/W

RthJC

RthJK

per thyristor/Diode; DC

per module

1.10

0.22

Creeping distance on surface

Creepage distance in air

16.1

7.1

m/s²

Maximum allowable acceleration

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